Surface textured ZnO films for thin film solar cell applications by expanding thermal plasma CVD

R. Groenen; J. Löffler; P.M. Sommeling; J.L. Linden; E.A.G. Hamers; R.E.I. Schropp; M.C.M. Sanden, van de

doi:10.1016/S0040-6090(01)01032-X

Surface textured ZnO films for thin film solar cell applications by expanding thermal plasma CVD

R. Groenen, J. Löffler, P.M. Sommeling, J.L. Linden, E.A.G. Hamers, R.E.I. Schropp, M.C.M. Sanden, van de

Plasma & Materials Processing

Research output: Contribution to journal › Article › Academic › peer-review

97 Citations (Scopus)

7 Downloads (Pure)

Abstract

An expanding thermal plasma created by a cascaded arc is used to deposit surface textured ZnO films. Films have been deposited at 150–350°C at a rate of typically 0.70 nm/s. They exhibit low resistivity (80%) and a rough surface texture. The crystallite size and surface roughness increase with increasing deposition temperature and flow of argon ions. At the same time columnar textured growth gets less pronounced, a change to granular growth is observed. First p-i-n a-Si:H solar cells deposited on this material with initial efficiencies approaching 10% have been realised.

Original language	English
Pages (from-to)	226-230
Journal	Thin Solid Films
Volume	392
Issue number	2
DOIs	https://doi.org/10.1016/S0040-6090(01)01032-X
Publication status	Published - 2001

Access to Document

10.1016/S0040-6090(01)01032-X

Fingerprint Dive into the research topics of 'Surface textured ZnO films for thin film solar cell applications by expanding thermal plasma CVD'. Together they form a unique fingerprint.

Cite this

@article{64c4a4f619e24312897946eecba7710c,

title = "Surface textured ZnO films for thin film solar cell applications by expanding thermal plasma CVD",

abstract = "An expanding thermal plasma created by a cascaded arc is used to deposit surface textured ZnO films. Films have been deposited at 150–350°C at a rate of typically 0.70 nm/s. They exhibit low resistivity (80%) and a rough surface texture. The crystallite size and surface roughness increase with increasing deposition temperature and flow of argon ions. At the same time columnar textured growth gets less pronounced, a change to granular growth is observed. First p-i-n a-Si:H solar cells deposited on this material with initial efficiencies approaching 10% have been realised.",

author = "R. Groenen and J. L{\"o}ffler and P.M. Sommeling and J.L. Linden and E.A.G. Hamers and R.E.I. Schropp and {Sanden, van de}, M.C.M.",

year = "2001",

doi = "10.1016/S0040-6090(01)01032-X",

language = "English",

volume = "392",

pages = "226--230",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "2",

}

TY - JOUR

T1 - Surface textured ZnO films for thin film solar cell applications by expanding thermal plasma CVD

AU - Groenen, R.

AU - Löffler, J.

AU - Sommeling, P.M.

AU - Linden, J.L.

AU - Hamers, E.A.G.

AU - Schropp, R.E.I.

AU - Sanden, van de, M.C.M.

PY - 2001

Y1 - 2001

N2 - An expanding thermal plasma created by a cascaded arc is used to deposit surface textured ZnO films. Films have been deposited at 150–350°C at a rate of typically 0.70 nm/s. They exhibit low resistivity (80%) and a rough surface texture. The crystallite size and surface roughness increase with increasing deposition temperature and flow of argon ions. At the same time columnar textured growth gets less pronounced, a change to granular growth is observed. First p-i-n a-Si:H solar cells deposited on this material with initial efficiencies approaching 10% have been realised.

AB - An expanding thermal plasma created by a cascaded arc is used to deposit surface textured ZnO films. Films have been deposited at 150–350°C at a rate of typically 0.70 nm/s. They exhibit low resistivity (80%) and a rough surface texture. The crystallite size and surface roughness increase with increasing deposition temperature and flow of argon ions. At the same time columnar textured growth gets less pronounced, a change to granular growth is observed. First p-i-n a-Si:H solar cells deposited on this material with initial efficiencies approaching 10% have been realised.

U2 - 10.1016/S0040-6090(01)01032-X

DO - 10.1016/S0040-6090(01)01032-X

M3 - Article

VL - 392

SP - 226

EP - 230

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 2

ER -