Surface roughness evolution of a-Si:H growth and its relation to the growth mechanism

A.H.M. Smets; D. C. Schram; M.C.M. Van de Sanden

doi:10.1557/PROC-609-A7.6

Surface roughness evolution of a-Si:H growth and its relation to the growth mechanism

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

The post-initial growth dynamic scaling exponent β, which describes the surface roughness evolution in time, is determined for a-Si:H growth using in situ single wavelength (632.8 nm) rotating compensator ellipsometry. β is measured as function of the substrate temperature for three different growth rates 2, 5 and 22 Ås^-1 under conditions where SiH₃ dominantly contributes to growth. β (≤ 0.5) decreases with increasing substrate temperature and does not strongly depend on the growth rate within the range of growth rates. A roughness evolution model is proposed, based upon a random generation of active growth sites and a subsequent site dependent surface diffusion process. The measured β temperature dependence can be simulated with an activated site hopping activation energy of about 1.0 eV. This activation energy is much higher than what would be expected from a model based upon the diffusion of physisorbed silyl SiH₃ radical and suggests therefore another mechanism which is responsible for the surface smoothening during a-Si:H growth.

Original language	English
Title of host publication	Amorphous and heterogeneous silicon thin films 2000 : symposium held [at the 2000 MRS Spring Meeting,] April 24 - 28, 2000, San Francisco, California, U.S.A
Editors	R.W. Collins, H.M. Branz, M. Stutzmann
Place of Publication	Warrendale, PA, USA
Publisher	Materials Research Society
Chapter	A7.6
Number of pages	6
ISBN (Print)	1-558-99517-X
DOIs	https://doi.org/10.1557/PROC-609-A7.6
Publication status	Published - 2001
Event	Amorphous and Heterogeneus Silicon Thin Films-2000 - San Francisco, CA, United States Duration: 24 Apr 2000 → 28 Apr 2000

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	609
ISSN (Print)	0272-9172

Conference

Conference	Amorphous and Heterogeneus Silicon Thin Films-2000
Country/Territory	United States
City	San Francisco, CA
Period	24/04/00 → 28/04/00

Funding

The skillful technical assistance of Ries van de Sande, Jo Jansen, Bertus Hüskens and Herman de Jong is gratefully acknowledged. NOVEM, TDO and FOM are acknowledged for their financial support.

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10.1557/PROC-609-A7.6

Cite this

Smets, A. H. M., Schram, D. C., & Van de Sanden, M. C. M. (2001). Surface roughness evolution of a-Si:H growth and its relation to the growth mechanism. In R. W. Collins, H. M. Branz, & M. Stutzmann (Eds.), Amorphous and heterogeneous silicon thin films 2000 : symposium held [at the 2000 MRS Spring Meeting,] April 24 - 28, 2000, San Francisco, California, U.S.A (Materials Research Society Symposium Proceedings; Vol. 609). Materials Research Society. https://doi.org/10.1557/PROC-609-A7.6

Smets, A.H.M. ; Schram, D. C. ; Van de Sanden, M.C.M. / Surface roughness evolution of a-Si:H growth and its relation to the growth mechanism. Amorphous and heterogeneous silicon thin films 2000 : symposium held [at the 2000 MRS Spring Meeting,] April 24 - 28, 2000, San Francisco, California, U.S.A. editor / R.W. Collins ; H.M. Branz ; M. Stutzmann. Warrendale, PA, USA : Materials Research Society, 2001. (Materials Research Society Symposium Proceedings).

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abstract = "The post-initial growth dynamic scaling exponent β, which describes the surface roughness evolution in time, is determined for a-Si:H growth using in situ single wavelength (632.8 nm) rotating compensator ellipsometry. β is measured as function of the substrate temperature for three different growth rates 2, 5 and 22 {\AA}s-1 under conditions where SiH3 dominantly contributes to growth. β (≤ 0.5) decreases with increasing substrate temperature and does not strongly depend on the growth rate within the range of growth rates. A roughness evolution model is proposed, based upon a random generation of active growth sites and a subsequent site dependent surface diffusion process. The measured β temperature dependence can be simulated with an activated site hopping activation energy of about 1.0 eV. This activation energy is much higher than what would be expected from a model based upon the diffusion of physisorbed silyl SiH3 radical and suggests therefore another mechanism which is responsible for the surface smoothening during a-Si:H growth.",

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Smets, AHM, Schram, DC & Van de Sanden, MCM 2001, Surface roughness evolution of a-Si:H growth and its relation to the growth mechanism. in RW Collins, HM Branz & M Stutzmann (eds), Amorphous and heterogeneous silicon thin films 2000 : symposium held [at the 2000 MRS Spring Meeting,] April 24 - 28, 2000, San Francisco, California, U.S.A. Materials Research Society Symposium Proceedings, vol. 609, Materials Research Society, Warrendale, PA, USA, Amorphous and Heterogeneus Silicon Thin Films-2000, San Francisco, CA, United States, 24/04/00. https://doi.org/10.1557/PROC-609-A7.6

Surface roughness evolution of a-Si:H growth and its relation to the growth mechanism. / Smets, A.H.M.; Schram, D. C.; Van de Sanden, M.C.M.
Amorphous and heterogeneous silicon thin films 2000 : symposium held [at the 2000 MRS Spring Meeting,] April 24 - 28, 2000, San Francisco, California, U.S.A. ed. / R.W. Collins; H.M. Branz; M. Stutzmann. Warrendale, PA, USA: Materials Research Society, 2001. (Materials Research Society Symposium Proceedings; Vol. 609).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Surface roughness evolution of a-Si:H growth and its relation to the growth mechanism

AU - Smets, A.H.M.

AU - Schram, D. C.

AU - Van de Sanden, M.C.M.

PY - 2001

Y1 - 2001

N2 - The post-initial growth dynamic scaling exponent β, which describes the surface roughness evolution in time, is determined for a-Si:H growth using in situ single wavelength (632.8 nm) rotating compensator ellipsometry. β is measured as function of the substrate temperature for three different growth rates 2, 5 and 22 Ås-1 under conditions where SiH3 dominantly contributes to growth. β (≤ 0.5) decreases with increasing substrate temperature and does not strongly depend on the growth rate within the range of growth rates. A roughness evolution model is proposed, based upon a random generation of active growth sites and a subsequent site dependent surface diffusion process. The measured β temperature dependence can be simulated with an activated site hopping activation energy of about 1.0 eV. This activation energy is much higher than what would be expected from a model based upon the diffusion of physisorbed silyl SiH3 radical and suggests therefore another mechanism which is responsible for the surface smoothening during a-Si:H growth.

AB - The post-initial growth dynamic scaling exponent β, which describes the surface roughness evolution in time, is determined for a-Si:H growth using in situ single wavelength (632.8 nm) rotating compensator ellipsometry. β is measured as function of the substrate temperature for three different growth rates 2, 5 and 22 Ås-1 under conditions where SiH3 dominantly contributes to growth. β (≤ 0.5) decreases with increasing substrate temperature and does not strongly depend on the growth rate within the range of growth rates. A roughness evolution model is proposed, based upon a random generation of active growth sites and a subsequent site dependent surface diffusion process. The measured β temperature dependence can be simulated with an activated site hopping activation energy of about 1.0 eV. This activation energy is much higher than what would be expected from a model based upon the diffusion of physisorbed silyl SiH3 radical and suggests therefore another mechanism which is responsible for the surface smoothening during a-Si:H growth.

UR - https://www.scopus.com/pages/publications/0034431262

U2 - 10.1557/PROC-609-A7.6

DO - 10.1557/PROC-609-A7.6

M3 - Conference contribution

SN - 1-558-99517-X

T3 - Materials Research Society Symposium Proceedings

BT - Amorphous and heterogeneous silicon thin films 2000 : symposium held [at the 2000 MRS Spring Meeting,] April 24 - 28, 2000, San Francisco, California, U.S.A

A2 - Collins, R.W.

A2 - Branz, H.M.

A2 - Stutzmann, M.

PB - Materials Research Society

CY - Warrendale, PA, USA

T2 - Amorphous and Heterogeneus Silicon Thin Films-2000

Y2 - 24 April 2000 through 28 April 2000

ER -

Smets AHM, Schram DC , Van de Sanden MCM. Surface roughness evolution of a-Si:H growth and its relation to the growth mechanism. In Collins RW, Branz HM, Stutzmann M, editors, Amorphous and heterogeneous silicon thin films 2000 : symposium held [at the 2000 MRS Spring Meeting,] April 24 - 28, 2000, San Francisco, California, U.S.A. Warrendale, PA, USA: Materials Research Society. 2001. (Materials Research Society Symposium Proceedings). doi: 10.1557/PROC-609-A7.6

Surface roughness evolution of a-Si:H growth and its relation to the growth mechanism

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