Surface reaction probability during fast deposition of hydrogenated amorphous silicon with a remote silane plasma

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Abstract

The surface reaction probability beta in a remote Ar-H/sub 2/-SiH/sub 4/ plasma used for high growth rate deposition of hydrogenated amorphous silicon (a-Si:H) has been investigated by a technique proposed by D.A. Doughty et al. [J. Appl. Phys. 67, 6220 (1990)]. Reactive species from the plasma are trapped in a well, created by two substrates with a small slit in the upper substrate. The distribution of amount of film deposited on both substrates yields information on the compound value of the surface reaction probability, which depends on the species entering the well. The surface reaction probability decreases from a value within the range of 0.45-0.50 in a highly dissociated plasma to 0.33+or-0.05 in a plasma with ~12% SiH/sub 4/ depletion. This corresponds to a shift from a plasma with a significant production of silane radicals with a high (surface) reactivity (SiH/sub x/,x
Original languageEnglish
Pages (from-to)3313-3320
JournalJournal of Applied Physics
Volume87
Issue number7
DOIs
Publication statusPublished - 2000

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