TY - JOUR
T1 - Surface passivation of silicon solar cells using industrially relevant Al2O3 deposition techniques
AU - Schmidt, J.
AU - Werner, F.
AU - Veith, B.
AU - Zielke, D.
AU - Bock, R.
AU - Brendel, R.
AU - Tiba, M.V.
AU - Poodt, P.
AU - Roozeboom, F.
AU - Li, A.
AU - Cuevas, A.
PY - 2010
Y1 - 2010
N2 - The next generation of industrial silicon solar cells aims at efficiencies of 20% and above. To achieve this goal using ever-thinner silicon wafers, a highly effective surface passivation of the cell front and rear is required. In the past, finding a suitable dielectric layer providing a high-quality rear passivation has been a major challenge. Aluminium oxide (Al2O3) grown by atomic layer deposition (ALD) has only recently turned out to be a nearly perfect candidate for such a dielectric. However, conventional ALD is limited to deposition rates well below 2nm/min, which is incompatible with industrial solar cell production. This paper assesses the passivation quality provided by three different industrially relevant techniques for the deposition of Al2O3 layers, namely high-rate spatial ALD, plasma-enhanced chemical vapour deposition (PECVD) and reactive sputtering.
AB - The next generation of industrial silicon solar cells aims at efficiencies of 20% and above. To achieve this goal using ever-thinner silicon wafers, a highly effective surface passivation of the cell front and rear is required. In the past, finding a suitable dielectric layer providing a high-quality rear passivation has been a major challenge. Aluminium oxide (Al2O3) grown by atomic layer deposition (ALD) has only recently turned out to be a nearly perfect candidate for such a dielectric. However, conventional ALD is limited to deposition rates well below 2nm/min, which is incompatible with industrial solar cell production. This paper assesses the passivation quality provided by three different industrially relevant techniques for the deposition of Al2O3 layers, namely high-rate spatial ALD, plasma-enhanced chemical vapour deposition (PECVD) and reactive sputtering.
M3 - Article
SN - 1757-1197
VL - 10
SP - 52
EP - 57
JO - Photovoltaics International : the Technology Resource for PV Professionals
JF - Photovoltaics International : the Technology Resource for PV Professionals
ER -