Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3

J. Schmidt, A. Merkle, R. Brendel, B. Hoex, M.C.M. Sanden, van de, W.M.M. Kessels

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Abstract

Atomic-layer-deposited aluminium oxide (Al2O3) is applied as rear-surface-passivating dielectric layer to passivated emitter and rear cell (PERC)-type crystalline silicon (c-Si) solar cells. The excellent passivation of low-resistivity p-type silicon by the negative-charge-dielectric Al2O3 is confirmed on the device level by an independently confirmed energy conversion efficiency of 20 6%. The best results are obtained for a stack consisting of a 30 nm Al2O3 film covered by a 200 nm plasma-enhanced-chemical-vapour-deposited silicon oxide (SiOx) layer, resulting in a rear surface recombination velocity (SRV) of 70cm/s. Comparable results are obtained for a 130 nm single-layer of Al 2O3, resulting in a rear SRV of 90 cm/s.
Original languageEnglish
Pages (from-to)461-466
JournalProgress in Photovoltaics: Research and Applications
Volume16
Issue number6
DOIs
Publication statusPublished - 2008

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