Surface induced asymmetry of acceptor wave functions

C. Celebi, J.K. Garleff, A.Yu. Silov, A.M. Yakunin, P.M. Koenraad, W. Roy, van, J.-M. Tang, M.E. Flatté

Research output: Contribution to journalArticleAcademicpeer-review

24 Citations (Scopus)
167 Downloads (Pure)


Measurements of the local density of states of individual acceptors in III–V semiconductors show that the symmetry of the acceptor states strongly depends on the depth of the atom below a (110) surface. Tight-binding calculations performed for a uniformly strained bulk material demonstrate that strain induced by the surface relaxation is responsible for the observed depth-dependent symmetry breaking of acceptor wave functions. As this effect is strongest for weakly bound acceptors, it explains within a unified approach the commonly observed triangular shapes of shallow acceptors and the crosslike shapes of deeply bound acceptor states in III–V materials.
Original languageEnglish
Article number086404
Pages (from-to)086404-1/4
Number of pages4
JournalPhysical Review Letters
Issue number8
Publication statusPublished - 2010


Dive into the research topics of 'Surface induced asymmetry of acceptor wave functions'. Together they form a unique fingerprint.

Cite this