Surface hydride composition of plasma deposited hydrogenated amorphous silicon : in situ infrared study of ion flux and temperature dependence

D.C. Marra; W.M.M. Kessels; M.C.M. Sanden, van de; K. Kashefizadeh; E.S. Aydil

doi:10.1016/S0039-6028(03)00396-0

Surface hydride composition of plasma deposited hydrogenated amorphous silicon : in situ infrared study of ion flux and temperature dependence

D.C. Marra, W.M.M. Kessels, M.C.M. Sanden, van de, K. Kashefizadeh, E.S. Aydil

Research output: Contribution to journal › Article › Academic › peer-review

46 Citations (Scopus)

Abstract

The surface silicon hydride composition of plasma deposited hydrogenated amorphous silicon (a-Si:H) films has been investigated through surface sensitive in situ attenuated total reflection infrared spectroscopy. The fraction of SiHx (x=1,2,3) on the surface is reported for films deposited at substrate temperatures in the range 40–370 °C and a series decomposition reaction set in which higher hydrides decompose into lower hydrides (SiH3 ¿ SiH2 ¿ SiH) for increasing substrate temperature is proposed. Surface dangling bonds promote the decomposition reactions on a-Si:H as concluded from experiments in which the incident ion flux during deposition is enhanced. A comparison is made with results reported for hydrogenated crystalline silicon surfaces and the hydrogen coverage of the a-Si:H surface is discussed.

Original language	English
Pages (from-to)	1-16
Journal	Surface Science
Volume	530
Issue number	1-2
DOIs	https://doi.org/10.1016/S0039-6028(03)00396-0
Publication status	Published - 2003

Access to Document

10.1016/S0039-6028(03)00396-0

Cite this

@article{698226478e7345db876265fc5643e6e8,

title = "Surface hydride composition of plasma deposited hydrogenated amorphous silicon : in situ infrared study of ion flux and temperature dependence",

abstract = "The surface silicon hydride composition of plasma deposited hydrogenated amorphous silicon (a-Si:H) films has been investigated through surface sensitive in situ attenuated total reflection infrared spectroscopy. The fraction of SiHx (x=1,2,3) on the surface is reported for films deposited at substrate temperatures in the range 40–370 °C and a series decomposition reaction set in which higher hydrides decompose into lower hydrides (SiH3 ¿ SiH2 ¿ SiH) for increasing substrate temperature is proposed. Surface dangling bonds promote the decomposition reactions on a-Si:H as concluded from experiments in which the incident ion flux during deposition is enhanced. A comparison is made with results reported for hydrogenated crystalline silicon surfaces and the hydrogen coverage of the a-Si:H surface is discussed.",

author = "D.C. Marra and W.M.M. Kessels and {Sanden, van de}, M.C.M. and K. Kashefizadeh and E.S. Aydil",

year = "2003",

doi = "10.1016/S0039-6028(03)00396-0",

language = "English",

volume = "530",

pages = "1--16",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Surface hydride composition of plasma deposited hydrogenated amorphous silicon : in situ infrared study of ion flux and temperature dependence

AU - Marra, D.C.

AU - Kessels, W.M.M.

AU - Sanden, van de, M.C.M.

AU - Kashefizadeh, K.

AU - Aydil, E.S.

PY - 2003

Y1 - 2003

N2 - The surface silicon hydride composition of plasma deposited hydrogenated amorphous silicon (a-Si:H) films has been investigated through surface sensitive in situ attenuated total reflection infrared spectroscopy. The fraction of SiHx (x=1,2,3) on the surface is reported for films deposited at substrate temperatures in the range 40–370 °C and a series decomposition reaction set in which higher hydrides decompose into lower hydrides (SiH3 ¿ SiH2 ¿ SiH) for increasing substrate temperature is proposed. Surface dangling bonds promote the decomposition reactions on a-Si:H as concluded from experiments in which the incident ion flux during deposition is enhanced. A comparison is made with results reported for hydrogenated crystalline silicon surfaces and the hydrogen coverage of the a-Si:H surface is discussed.

AB - The surface silicon hydride composition of plasma deposited hydrogenated amorphous silicon (a-Si:H) films has been investigated through surface sensitive in situ attenuated total reflection infrared spectroscopy. The fraction of SiHx (x=1,2,3) on the surface is reported for films deposited at substrate temperatures in the range 40–370 °C and a series decomposition reaction set in which higher hydrides decompose into lower hydrides (SiH3 ¿ SiH2 ¿ SiH) for increasing substrate temperature is proposed. Surface dangling bonds promote the decomposition reactions on a-Si:H as concluded from experiments in which the incident ion flux during deposition is enhanced. A comparison is made with results reported for hydrogenated crystalline silicon surfaces and the hydrogen coverage of the a-Si:H surface is discussed.

U2 - 10.1016/S0039-6028(03)00396-0

DO - 10.1016/S0039-6028(03)00396-0

M3 - Article

SN - 0039-6028

VL - 530

SP - 1

EP - 16

JO - Surface Science

JF - Surface Science

IS - 1-2

ER -

Surface hydride composition of plasma deposited hydrogenated amorphous silicon : in situ infrared study of ion flux and temperature dependence

Abstract

Access to Document

Fingerprint

Cite this