Surface analysis of reactive ion-etched indium phosphide

R. Roijen, van, M.B.M. Kemp, C.W.T. Bulle-Lieuwma, L.J. IJzendoorn, van, T.L.G. Thijssen

    Research output: Contribution to journalArticleAcademicpeer-review

    21 Citations (Scopus)
    176 Downloads (Pure)


    A dry-etch process for InP is developed using a mixture of Cl2, Ar, CH4, and H2. This process results in a high etch rate and good anisotropy. The induced damage is investigated by surface characterization after etching, using x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, photoluminescence measurements, and transmission electron microscopy. The etch mechanism is briefly discussed.
    Original languageEnglish
    Pages (from-to)3983-3985
    Number of pages3
    JournalJournal of Applied Physics
    Issue number7
    Publication statusPublished - 1991


    Dive into the research topics of 'Surface analysis of reactive ion-etched indium phosphide'. Together they form a unique fingerprint.

    Cite this