Surface analysis of reactive ion-etched indium phosphide

R. Roijen, van; M.B.M. Kemp; C.W.T. Bulle-Lieuwma; L.J. IJzendoorn, van; T.L.G. Thijssen

doi:10.1063/1.349165

Surface analysis of reactive ion-etched indium phosphide

R. Roijen, van, M.B.M. Kemp, C.W.T. Bulle-Lieuwma, L.J. IJzendoorn, van, T.L.G. Thijssen

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Abstract

A dry-etch process for InP is developed using a mixture of Cl2, Ar, CH4, and H2. This process results in a high etch rate and good anisotropy. The induced damage is investigated by surface characterization after etching, using x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, photoluminescence measurements, and transmission electron microscopy. The etch mechanism is briefly discussed.

Original language	English
Pages (from-to)	3983-3985
Number of pages	3
Journal	Journal of Applied Physics
Volume	70
Issue number	7
DOIs	https://doi.org/10.1063/1.349165
Publication status	Published - 1991

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Roijen, van, R., Kemp, M. B. M., Bulle-Lieuwma, C. W. T., IJzendoorn, van, L. J., & Thijssen, T. L. G. (1991). Surface analysis of reactive ion-etched indium phosphide. Journal of Applied Physics, 70(7), 3983-3985. https://doi.org/10.1063/1.349165

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abstract = "A dry-etch process for InP is developed using a mixture of Cl2, Ar, CH4, and H2. This process results in a high etch rate and good anisotropy. The induced damage is investigated by surface characterization after etching, using x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, photoluminescence measurements, and transmission electron microscopy. The etch mechanism is briefly discussed.",

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