A dry-etch process for InP is developed using a mixture of Cl2, Ar, CH4, and H2. This process results in a high etch rate and good anisotropy. The induced damage is investigated by surface characterization after etching, using x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, photoluminescence measurements, and transmission electron microscopy. The etch mechanism is briefly discussed.
Roijen, van, R., Kemp, M. B. M., Bulle-Lieuwma, C. W. T., IJzendoorn, van, L. J., & Thijssen, T. L. G. (1991). Surface analysis of reactive ion-etched indium phosphide. Journal of Applied Physics, 70(7), 3983-3985. https://doi.org/10.1063/1.349165