TY - JOUR
T1 - Surface analysis of reactive ion-etched indium phosphide
AU - Roijen, van, R.
AU - Kemp, M.B.M.
AU - Bulle-Lieuwma, C.W.T.
AU - IJzendoorn, van, L.J.
AU - Thijssen, T.L.G.
PY - 1991
Y1 - 1991
N2 - A dry-etch process for InP is developed using a mixture of Cl2, Ar, CH4, and H2. This process results in a high etch rate and good anisotropy. The induced damage is investigated by surface characterization after etching, using x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, photoluminescence measurements, and transmission electron microscopy. The etch mechanism is briefly discussed.
AB - A dry-etch process for InP is developed using a mixture of Cl2, Ar, CH4, and H2. This process results in a high etch rate and good anisotropy. The induced damage is investigated by surface characterization after etching, using x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, photoluminescence measurements, and transmission electron microscopy. The etch mechanism is briefly discussed.
U2 - 10.1063/1.349165
DO - 10.1063/1.349165
M3 - Article
VL - 70
SP - 3983
EP - 3985
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 7
ER -