Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 747-757 |
| Number of pages | 11 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 50 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2003 |
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Substrate transfer for RF technologies. / Dekker, R.; Baltus, P.G.M.; Maas, H.G.R.
In: IEEE Transactions on Electron Devices, Vol. 50, No. 3, 2003, p. 747-757.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - Substrate transfer for RF technologies
AU - Dekker, R.
AU - Baltus, P.G.M.
AU - Maas, H.G.R.
PY - 2003
Y1 - 2003
N2 - The constant pressure on performance improvement in RF processes is aimed at higher frequencies, less power consumption, and a higher integration level of high quality passives with digital active devices. Although excellent for the fabrication of active devices, it is the silicon substrate as a carrier that is blocking breakthroughs. Since all devices on a silicon wafer have a capacitive coupling to the resistive substrate, this results in a dissipation of RF energy, poor quality passives, cross-talk, and injection of thermal noise. We have developed a low-cost wafer-scale post-processing technology for transferring circuits, fabricated with standard IC processing, to an alternative substrate, e.g., glass. This technique comprises the gluing of a fully processed wafer, top down, to an alternative carrier followed by either partial or complete removal of the original silicon substrate. This effectively removes the drawbacks of silicon as a circuit carrier and enables the integration of high-quality passive components and eliminates cross-talk between circuit parts. A considerable development effort has brought this technology to a production-ready level of maturity. Batch-to-batch production equipment is now available and the technology and know-how are being licensed. In this paper, we present four examples to demonstrate the versatility of substrate transfer for RF applications.
AB - The constant pressure on performance improvement in RF processes is aimed at higher frequencies, less power consumption, and a higher integration level of high quality passives with digital active devices. Although excellent for the fabrication of active devices, it is the silicon substrate as a carrier that is blocking breakthroughs. Since all devices on a silicon wafer have a capacitive coupling to the resistive substrate, this results in a dissipation of RF energy, poor quality passives, cross-talk, and injection of thermal noise. We have developed a low-cost wafer-scale post-processing technology for transferring circuits, fabricated with standard IC processing, to an alternative substrate, e.g., glass. This technique comprises the gluing of a fully processed wafer, top down, to an alternative carrier followed by either partial or complete removal of the original silicon substrate. This effectively removes the drawbacks of silicon as a circuit carrier and enables the integration of high-quality passive components and eliminates cross-talk between circuit parts. A considerable development effort has brought this technology to a production-ready level of maturity. Batch-to-batch production equipment is now available and the technology and know-how are being licensed. In this paper, we present four examples to demonstrate the versatility of substrate transfer for RF applications.
U2 - 10.1109/TED.2003.810468
DO - 10.1109/TED.2003.810468
M3 - Article
VL - 50
SP - 747
EP - 757
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 3
ER -