Substrate biasing during plasma-assisted ALD for crystalline phase-control of TiO2 thin films

H.B. Profijt; M.C.M. Sanden, van de; W.M.M. Kessels

doi:10.1149/2.024202esl

Substrate biasing during plasma-assisted ALD for crystalline phase-control of TiO2 thin films

H.B. Profijt, M.C.M. Sanden, van de, W.M.M. Kessels

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Abstract

Substrate biasing has been implemented in a remote plasma atomic layer deposition (ALD) reactor, enabling control of the ion energy up to 260 eV. For TiO2 films deposited from Ti(CpMe)(NMe2)3 and O2 plasma it is demonstrated that the crystalline phase can be tailored by tuning the ion energy. Rutile TiO2 was obtained at 200 and 300°C, typically yielding amorphous and anatase films without biasing. Aspects such as film mass density, [O]/[Ti] ratio and growth per cycle under biased conditions are addressed. The results demonstrate that substrate biasing is a viable method for ALD to tailor ultra-thin film properties.

Original language	English
Pages (from-to)	G1-G3
Journal	Electrochemical and Solid-State Letters
Volume	15
Issue number	2
DOIs	https://doi.org/10.1149/2.024202esl
Publication status	Published - 2012

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AB - Substrate biasing has been implemented in a remote plasma atomic layer deposition (ALD) reactor, enabling control of the ion energy up to 260 eV. For TiO2 films deposited from Ti(CpMe)(NMe2)3 and O2 plasma it is demonstrated that the crystalline phase can be tailored by tuning the ion energy. Rutile TiO2 was obtained at 200 and 300°C, typically yielding amorphous and anatase films without biasing. Aspects such as film mass density, [O]/[Ti] ratio and growth per cycle under biased conditions are addressed. The results demonstrate that substrate biasing is a viable method for ALD to tailor ultra-thin film properties.

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JF - Electrochemical and Solid-State Letters

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Substrate biasing during plasma-assisted ALD for crystalline phase-control of TiO2 thin films

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