Submicron active-passive integration with position and number controlled InAs/InP (100) quantum dots (1.55 µm wavelength region) by selective-area growth

D. Zhou; S. Anantathanasarn; P.J. Veldhoven, van; F.W.M. Otten, van; T.J. Eijkemans; T. Vries, de; E. Smalbrugge; R. Nötzel

doi:10.1063/1.2790378

Submicron active-passive integration with position and number controlled InAs/InP (100) quantum dots (1.55 µm wavelength region) by selective-area growth

D. Zhou, S. Anantathanasarn, P.J. Veldhoven, van, F.W.M. Otten, van, T.J. Eijkemans, T. Vries, de, E. Smalbrugge, R. Nötzel

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Abstract

The authors report lateral positioning and number control of InAs quantum dots (QDs) on truncated InP (100)pyramids by selective-area metal organic vapor-phase epitaxy. With reducing QD number, sharp emission peaksare observed from individual and single QDs with wavelength tuned into the 1.55 µm telecom region by insertion of ultrathin GaAs interlayersbeneath the QDs. Regrowth of a passive waveguide structure around the pyramids establishes submicrometer-scale active-passiveintegration for efficient microcavity QD nanolasers and single photon sources.

Original language	English
Article number	131102
Pages (from-to)	131102-1/3
Journal	Applied Physics Letters
Volume	91
Issue number	13
DOIs	https://doi.org/10.1063/1.2790378
Publication status	Published - 2007

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Zhou, D., Anantathanasarn, S., Veldhoven, van, P. J., Otten, van, F. W. M., Eijkemans, T. J., Vries, de, T., Smalbrugge, E., & Nötzel, R. (2007). Submicron active-passive integration with position and number controlled InAs/InP (100) quantum dots (1.55 µm wavelength region) by selective-area growth. Applied Physics Letters, 91(13), 131102-1/3. [131102]. https://doi.org/10.1063/1.2790378

@article{58d475807ce54307be83a9bf038e8b8e,

title = "Submicron active-passive integration with position and number controlled InAs/InP (100) quantum dots (1.55 µm wavelength region) by selective-area growth",

abstract = "The authors report lateral positioning and number control of InAs quantum dots (QDs) on truncated InP (100)pyramids by selective-area metal organic vapor-phase epitaxy. With reducing QD number, sharp emission peaksare observed from individual and single QDs with wavelength tuned into the 1.55 µm telecom region by insertion of ultrathin GaAs interlayersbeneath the QDs. Regrowth of a passive waveguide structure around the pyramids establishes submicrometer-scale active-passiveintegration for efficient microcavity QD nanolasers and single photon sources.",

author = "D. Zhou and S. Anantathanasarn and {Veldhoven, van}, P.J. and {Otten, van}, F.W.M. and T.J. Eijkemans and {Vries, de}, T. and E. Smalbrugge and R. N{\"o}tzel",

year = "2007",

doi = "10.1063/1.2790378",

language = "English",

volume = "91",

pages = "131102--1/3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

}

Zhou, D, Anantathanasarn, S, Veldhoven, van, PJ, Otten, van, FWM, Eijkemans, TJ, Vries, de, T, Smalbrugge, E & Nötzel, R 2007, 'Submicron active-passive integration with position and number controlled InAs/InP (100) quantum dots (1.55 µm wavelength region) by selective-area growth', Applied Physics Letters, vol. 91, no. 13, 131102, pp. 131102-1/3. https://doi.org/10.1063/1.2790378

Submicron active-passive integration with position and number controlled InAs/InP (100) quantum dots (1.55 µm wavelength region) by selective-area growth. / Zhou, D.; Anantathanasarn, S.; Veldhoven, van, P.J.; Otten, van, F.W.M.; Eijkemans, T.J.; Vries, de, T.; Smalbrugge, E.; Nötzel, R.

In: Applied Physics Letters, Vol. 91, No. 13, 131102, 2007, p. 131102-1/3.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Submicron active-passive integration with position and number controlled InAs/InP (100) quantum dots (1.55 µm wavelength region) by selective-area growth

AU - Zhou, D.

AU - Anantathanasarn, S.

AU - Veldhoven, van, P.J.

AU - Otten, van, F.W.M.

AU - Eijkemans, T.J.

AU - Vries, de, T.

AU - Smalbrugge, E.

AU - Nötzel, R.

PY - 2007

Y1 - 2007

N2 - The authors report lateral positioning and number control of InAs quantum dots (QDs) on truncated InP (100)pyramids by selective-area metal organic vapor-phase epitaxy. With reducing QD number, sharp emission peaksare observed from individual and single QDs with wavelength tuned into the 1.55 µm telecom region by insertion of ultrathin GaAs interlayersbeneath the QDs. Regrowth of a passive waveguide structure around the pyramids establishes submicrometer-scale active-passiveintegration for efficient microcavity QD nanolasers and single photon sources.

AB - The authors report lateral positioning and number control of InAs quantum dots (QDs) on truncated InP (100)pyramids by selective-area metal organic vapor-phase epitaxy. With reducing QD number, sharp emission peaksare observed from individual and single QDs with wavelength tuned into the 1.55 µm telecom region by insertion of ultrathin GaAs interlayersbeneath the QDs. Regrowth of a passive waveguide structure around the pyramids establishes submicrometer-scale active-passiveintegration for efficient microcavity QD nanolasers and single photon sources.

U2 - 10.1063/1.2790378

DO - 10.1063/1.2790378

M3 - Article

VL - 91

SP - 131102-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

M1 - 131102

ER -

Submicron active-passive integration with position and number controlled InAs/InP (100) quantum dots (1.55 µm wavelength region) by selective-area growth

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