Abstract
The authors report lateral positioning and number control of InAs quantum dots (QDs) on truncated InP (100)pyramids by selective-area metal organic vapor-phase epitaxy. With reducing QD number, sharp emission peaksare observed from individual and single QDs with wavelength tuned into the 1.55 µm telecom region by insertion of ultrathin GaAs interlayersbeneath the QDs. Regrowth of a passive waveguide structure around the pyramids establishes submicrometer-scale active-passiveintegration for efficient microcavity QD nanolasers and single photon sources.
Original language | English |
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Article number | 131102 |
Pages (from-to) | 131102-1/3 |
Journal | Applied Physics Letters |
Volume | 91 |
Issue number | 13 |
DOIs | |
Publication status | Published - 2007 |