Submicron active-passive integration with position and number controlled InAs/InP (100) quantum dots (1.55 µm wavelength region) by selective-area growth

D. Zhou, S. Anantathanasarn, P.J. Veldhoven, van, F.W.M. Otten, van, T.J. Eijkemans, T. Vries, de, E. Smalbrugge, R. Nötzel

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Abstract

The authors report lateral positioning and number control of InAs quantum dots (QDs) on truncated InP (100)pyramids by selective-area metal organic vapor-phase epitaxy. With reducing QD number, sharp emission peaksare observed from individual and single QDs with wavelength tuned into the 1.55 µm telecom region by insertion of ultrathin GaAs interlayersbeneath the QDs. Regrowth of a passive waveguide structure around the pyramids establishes submicrometer-scale active-passiveintegration for efficient microcavity QD nanolasers and single photon sources.
Original languageEnglish
Article number131102
Pages (from-to)131102-1/3
JournalApplied Physics Letters
Volume91
Issue number13
DOIs
Publication statusPublished - 2007

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