Submicron active-passive integration for InP-bsed membranes on silicon

R. Zhang, F. Bordas, J.J.G.M. Tol, van der, B. Ambrosius, M.A. Dundar, G. Roelkens, M.K. Smit, P.J.A. Thijs

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Abstract

The high vertical index contrast and the small thickness of thin InP-based membrane structures bonded with BCB on Silicon allow the realization of very small devices. To make photonic integrated circuits with both passive and active components in these membranes, active-passive integration on a small scale is essential. In this paper we will present our results on sub-micrometer active areas for membrane applications.
Original languageEnglish
Title of host publicationProceedings of the 15th European Conference in Integrated Optics, ECIO 2010, April 6-9, 2010, Cambridge, United Kingdom
Place of PublicationLondon
PublisherInstitution of Engineering and Technology (IET)
Pages1-2
Publication statusPublished - 2010
Event15th European Conference on Integrated Optics (ECIO 2010) - Cambridge, United Kingdom
Duration: 7 Apr 20109 Apr 2010
Conference number: 15

Conference

Conference15th European Conference on Integrated Optics (ECIO 2010)
Abbreviated titleECIO 2010
Country/TerritoryUnited Kingdom
CityCambridge
Period7/04/109/04/10
Other

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