Submicron active-passive integration for InP-bsed membranes on silicon

R. Zhang; F. Bordas; J.J.G.M. Tol, van der; B. Ambrosius; M.A. Dundar; G. Roelkens; M.K. Smit; P.J.A. Thijs

Submicron active-passive integration for InP-bsed membranes on silicon

R. Zhang, F. Bordas, J.J.G.M. Tol, van der, B. Ambrosius, M.A. Dundar, G. Roelkens, M.K. Smit, P.J.A. Thijs

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Abstract

The high vertical index contrast and the small thickness of thin InP-based membrane structures bonded with BCB on Silicon allow the realization of very small devices. To make photonic integrated circuits with both passive and active components in these membranes, active-passive integration on a small scale is essential. In this paper we will present our results on sub-micrometer active areas for membrane applications.

Original language	English
Title of host publication	Proceedings of the 15th European Conference in Integrated Optics, ECIO 2010, April 6-9, 2010, Cambridge, United Kingdom
Place of Publication	London
Publisher	Institution of Engineering and Technology (IET)
Pages	1-2
Publication status	Published - 2010
Event	15th European Conference on Integrated Optics (ECIO 2010) - Cambridge, United Kingdom Duration: 7 Apr 2010 → 9 Apr 2010 Conference number: 15

Conference

Conference	15th European Conference on Integrated Optics (ECIO 2010)
Abbreviated title	ECIO 2010
Country/Territory	United Kingdom
City	Cambridge
Period	7/04/10 → 9/04/10
Other

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Zhang, R., Bordas, F., Tol, van der, J. J. G. M., Ambrosius, B., Dundar, M. A., Roelkens, G., Smit, M. K., & Thijs, P. J. A. (2010). Submicron active-passive integration for InP-bsed membranes on silicon. In Proceedings of the 15th European Conference in Integrated Optics, ECIO 2010, April 6-9, 2010, Cambridge, United Kingdom (pp. 1-2). Article ThH1 Institution of Engineering and Technology (IET).

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title = "Submicron active-passive integration for InP-bsed membranes on silicon",

abstract = "The high vertical index contrast and the small thickness of thin InP-based membrane structures bonded with BCB on Silicon allow the realization of very small devices. To make photonic integrated circuits with both passive and active components in these membranes, active-passive integration on a small scale is essential. In this paper we will present our results on sub-micrometer active areas for membrane applications.",

author = "R. Zhang and F. Bordas and {Tol, van der}, J.J.G.M. and B. Ambrosius and M.A. Dundar and G. Roelkens and M.K. Smit and P.J.A. Thijs",

year = "2010",

language = "English",

pages = "1--2",

booktitle = "Proceedings of the 15th European Conference in Integrated Optics, ECIO 2010, April 6-9, 2010, Cambridge, United Kingdom",

publisher = "Institution of Engineering and Technology (IET)",

address = "United Kingdom",

note = "15th European Conference on Integrated Optics (ECIO 2010), ECIO 2010 ; Conference date: 07-04-2010 Through 09-04-2010",

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Zhang, R, Bordas, F, Tol, van der, JJGM, Ambrosius, B, Dundar, MA, Roelkens, G, Smit, MK & Thijs, PJA 2010, Submicron active-passive integration for InP-bsed membranes on silicon. in Proceedings of the 15th European Conference in Integrated Optics, ECIO 2010, April 6-9, 2010, Cambridge, United Kingdom., ThH1, Institution of Engineering and Technology (IET), London, pp. 1-2, 15th European Conference on Integrated Optics (ECIO 2010), Cambridge, United Kingdom, 7/04/10.

Submicron active-passive integration for InP-bsed membranes on silicon. / Zhang, R.; Bordas, F.; Tol, van der, J.J.G.M. et al.
Proceedings of the 15th European Conference in Integrated Optics, ECIO 2010, April 6-9, 2010, Cambridge, United Kingdom. London: Institution of Engineering and Technology (IET), 2010. p. 1-2 ThH1.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Professional

TY - GEN

T1 - Submicron active-passive integration for InP-bsed membranes on silicon

AU - Zhang, R.

AU - Bordas, F.

AU - Tol, van der, J.J.G.M.

AU - Ambrosius, B.

AU - Dundar, M.A.

AU - Roelkens, G.

AU - Smit, M.K.

AU - Thijs, P.J.A.

N1 - Conference code: 15

PY - 2010

Y1 - 2010

N2 - The high vertical index contrast and the small thickness of thin InP-based membrane structures bonded with BCB on Silicon allow the realization of very small devices. To make photonic integrated circuits with both passive and active components in these membranes, active-passive integration on a small scale is essential. In this paper we will present our results on sub-micrometer active areas for membrane applications.

AB - The high vertical index contrast and the small thickness of thin InP-based membrane structures bonded with BCB on Silicon allow the realization of very small devices. To make photonic integrated circuits with both passive and active components in these membranes, active-passive integration on a small scale is essential. In this paper we will present our results on sub-micrometer active areas for membrane applications.

M3 - Conference contribution

SP - 1

EP - 2

BT - Proceedings of the 15th European Conference in Integrated Optics, ECIO 2010, April 6-9, 2010, Cambridge, United Kingdom

PB - Institution of Engineering and Technology (IET)

CY - London

T2 - 15th European Conference on Integrated Optics (ECIO 2010)

Y2 - 7 April 2010 through 9 April 2010

ER -

Submicron active-passive integration for InP-bsed membranes on silicon

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