Submicron active-passive integration for InP-based membranes on silicon

R. Zhang, F. Bordas, J.J.G.M. Tol, van der, P.J.A. Thijs, H.P.M.M. Ambrosius, G. Roelkens, M.A. Dündar, M.K. Smit

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The high vertical index contrast and the small thickness of thin InP-based membrane structures bonded with BCB on Silicon allow the realization of very small devices. To make photonic integrated circuits with both passive and active components in these membranes, active-passive integration on a small scale is essential. In this paper we will present our results on sub-micrometer active areas for membrane applications.
Original languageEnglish
Title of host publicationProceedings of the 15th European Conference on Integrated Optics, ECIO10, April 06-09, Cambridge, United Kingdom
EditorsI. White, R. Penty
Place of PublicationLondon
PublisherInstitution of Engineering and Technology (IET)
Publication statusPublished - 2010


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