Submicron active-passive integration for InP-based membranes on silicon

R. Zhang; F. Bordas; J.J.G.M. Tol, van der; P.J.A. Thijs; H.P.M.M. Ambrosius; G. Roelkens; M.A. Dündar; M.K. Smit

Submicron active-passive integration for InP-based membranes on silicon

R. Zhang, F. Bordas, J.J.G.M. Tol, van der, P.J.A. Thijs, H.P.M.M. Ambrosius, G. Roelkens, M.A. Dündar, M.K. Smit

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

The high vertical index contrast and the small thickness of thin InP-based membrane structures bonded with BCB on Silicon allow the realization of very small devices. To make photonic integrated circuits with both passive and active components in these membranes, active-passive integration on a small scale is essential. In this paper we will present our results on sub-micrometer active areas for membrane applications.

Original language	English
Title of host publication	Proceedings of the 15th European Conference on Integrated Optics, ECIO10, April 06-09, Cambridge, United Kingdom
Editors	I. White, R. Penty
Place of Publication	London
Publisher	Institution of Engineering and Technology
Pages	ThH1-1/2
Publication status	Published - 2010

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Zhang, R., Bordas, F., Tol, van der, J. J. G. M., Thijs, P. J. A., Ambrosius, H. P. M. M., Roelkens, G., Dündar, M. A., & Smit, M. K. (2010). Submicron active-passive integration for InP-based membranes on silicon. In I. White, & R. Penty (Eds.), Proceedings of the 15th European Conference on Integrated Optics, ECIO10, April 06-09, Cambridge, United Kingdom (pp. ThH1-1/2). Institution of Engineering and Technology.

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title = "Submicron active-passive integration for InP-based membranes on silicon",

abstract = "The high vertical index contrast and the small thickness of thin InP-based membrane structures bonded with BCB on Silicon allow the realization of very small devices. To make photonic integrated circuits with both passive and active components in these membranes, active-passive integration on a small scale is essential. In this paper we will present our results on sub-micrometer active areas for membrane applications.",

author = "R. Zhang and F. Bordas and {Tol, van der}, J.J.G.M. and P.J.A. Thijs and H.P.M.M. Ambrosius and G. Roelkens and M.A. D{\"u}ndar and M.K. Smit",

year = "2010",

language = "English",

pages = "ThH1--1/2",

editor = "I. White and R. Penty",

booktitle = "Proceedings of the 15th European Conference on Integrated Optics, ECIO10, April 06-09, Cambridge, United Kingdom",

publisher = "Institution of Engineering and Technology",

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Zhang, R, Bordas, F, Tol, van der, JJGM, Thijs, PJA, Ambrosius, HPMM, Roelkens, G, Dündar, MA & Smit, MK 2010, Submicron active-passive integration for InP-based membranes on silicon. in I White & R Penty (eds), Proceedings of the 15th European Conference on Integrated Optics, ECIO10, April 06-09, Cambridge, United Kingdom. Institution of Engineering and Technology, London, pp. ThH1-1/2.

Submicron active-passive integration for InP-based membranes on silicon. / Zhang, R.; Bordas, F.; Tol, van der, J.J.G.M. et al.
Proceedings of the 15th European Conference on Integrated Optics, ECIO10, April 06-09, Cambridge, United Kingdom. ed. / I. White; R. Penty. London: Institution of Engineering and Technology, 2010. p. ThH1-1/2.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Submicron active-passive integration for InP-based membranes on silicon

AU - Zhang, R.

AU - Bordas, F.

AU - Tol, van der, J.J.G.M.

AU - Thijs, P.J.A.

AU - Ambrosius, H.P.M.M.

AU - Roelkens, G.

AU - Dündar, M.A.

AU - Smit, M.K.

PY - 2010

Y1 - 2010

N2 - The high vertical index contrast and the small thickness of thin InP-based membrane structures bonded with BCB on Silicon allow the realization of very small devices. To make photonic integrated circuits with both passive and active components in these membranes, active-passive integration on a small scale is essential. In this paper we will present our results on sub-micrometer active areas for membrane applications.

AB - The high vertical index contrast and the small thickness of thin InP-based membrane structures bonded with BCB on Silicon allow the realization of very small devices. To make photonic integrated circuits with both passive and active components in these membranes, active-passive integration on a small scale is essential. In this paper we will present our results on sub-micrometer active areas for membrane applications.

M3 - Conference contribution

SP - ThH1-1/2

BT - Proceedings of the 15th European Conference on Integrated Optics, ECIO10, April 06-09, Cambridge, United Kingdom

A2 - White, I.

A2 - Penty, R.

PB - Institution of Engineering and Technology

CY - London

ER -

Submicron active-passive integration for InP-based membranes on silicon

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