Sub-micrometer active-passive integration for InP-based membranes on silicon

R. Zhang; F. Bordas; J.J.G.M. Tol, van der; P.J.A. Thijs; H.P.M.M. Ambrosius; G. Roelkens; M.A. Dündar; T. Vries, de; M.K. Smit

Sub-micrometer active-passive integration for InP-based membranes on silicon

R. Zhang
, F. Bordas
, J.J.G.M. Tol, van der
, P.J.A. Thijs
, H.P.M.M. Ambrosius
, G. Roelkens
, M.A. Dündar
, T. Vries, de
, M.K. Smit

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

The high vertical index contrast and the small thickness of InP-based membrane structures bonded with BCB on Silicon allow the realization of very small devices. Since photonic integrated circuits consist of both passive and active components, a successful active-passive integration with sub-micrometer active regions is an essential step. In this paper we will present our results on active-passive integration with sub-micrometer active areas. The interference of active and passive area shows a good quality in terms of morphology. Moreover we find that in the sub-micrometer size active area, the degradation of the material(InGaAsP QWs) due to clean room processing is limited.

Original language	English
Title of host publication	Proceedings 14th Annual Symposium of the IEEE Photonics Benelux Chapter, 5-6 November 2009, Brussels, Belgium
Editors	St. Beri, Ph. Tassin, G. Craggs, X. Leijtens, J. Danckaert
Place of Publication	Brussels
Publisher	Brussels University Press
Pages	121-124
ISBN (Print)	978-90-5487-650-2
Publication status	Published - 2009

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Zhang, R., Bordas, F., Tol, van der, J. J. G. M., Thijs, P. J. A., Ambrosius, H. P. M. M., Roelkens, G., Dündar, M. A., Vries, de, T., & Smit, M. K. (2009). Sub-micrometer active-passive integration for InP-based membranes on silicon. In S. Beri, P. Tassin, G. Craggs, X. Leijtens, & J. Danckaert (Eds.), Proceedings 14th Annual Symposium of the IEEE Photonics Benelux Chapter, 5-6 November 2009, Brussels, Belgium (pp. 121-124). Brussels University Press.

Zhang, R. ; Bordas, F. ; Tol, van der, J.J.G.M. et al. / Sub-micrometer active-passive integration for InP-based membranes on silicon. Proceedings 14th Annual Symposium of the IEEE Photonics Benelux Chapter, 5-6 November 2009, Brussels, Belgium. editor / St. Beri ; Ph. Tassin ; G. Craggs ; X. Leijtens ; J. Danckaert. Brussels : Brussels University Press, 2009. pp. 121-124

@inproceedings{0c2da84cdeb840d1bf304bb405a2d076,

title = "Sub-micrometer active-passive integration for InP-based membranes on silicon",

abstract = "The high vertical index contrast and the small thickness of InP-based membrane structures bonded with BCB on Silicon allow the realization of very small devices. Since photonic integrated circuits consist of both passive and active components, a successful active-passive integration with sub-micrometer active regions is an essential step. In this paper we will present our results on active-passive integration with sub-micrometer active areas. The interference of active and passive area shows a good quality in terms of morphology. Moreover we find that in the sub-micrometer size active area, the degradation of the material(InGaAsP QWs) due to clean room processing is limited.",

author = "R. Zhang and F. Bordas and \{Tol, van der\}, J.J.G.M. and P.J.A. Thijs and H.P.M.M. Ambrosius and G. Roelkens and M.A. D{\"u}ndar and \{Vries, de\}, T. and M.K. Smit",

year = "2009",

language = "English",

isbn = "978-90-5487-650-2",

pages = "121--124",

editor = "St. Beri and Ph. Tassin and G. Craggs and X. Leijtens and J. Danckaert",

booktitle = "Proceedings 14th Annual Symposium of the IEEE Photonics Benelux Chapter, 5-6 November 2009, Brussels, Belgium",

publisher = "Brussels University Press",

}

Zhang, R, Bordas, F, Tol, van der, JJGM, Thijs, PJA, Ambrosius, HPMM, Roelkens, G, Dündar, MA, Vries, de, T & Smit, MK 2009, Sub-micrometer active-passive integration for InP-based membranes on silicon. in S Beri, P Tassin, G Craggs, X Leijtens & J Danckaert (eds), Proceedings 14th Annual Symposium of the IEEE Photonics Benelux Chapter, 5-6 November 2009, Brussels, Belgium. Brussels University Press, Brussels, pp. 121-124.

Sub-micrometer active-passive integration for InP-based membranes on silicon. / Zhang, R.; Bordas, F.; Tol, van der, J.J.G.M. et al.
Proceedings 14th Annual Symposium of the IEEE Photonics Benelux Chapter, 5-6 November 2009, Brussels, Belgium. ed. / St. Beri; Ph. Tassin; G. Craggs; X. Leijtens; J. Danckaert. Brussels: Brussels University Press, 2009. p. 121-124.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Sub-micrometer active-passive integration for InP-based membranes on silicon

AU - Zhang, R.

AU - Bordas, F.

AU - Tol, van der, J.J.G.M.

AU - Thijs, P.J.A.

AU - Ambrosius, H.P.M.M.

AU - Roelkens, G.

AU - Dündar, M.A.

AU - Vries, de, T.

AU - Smit, M.K.

PY - 2009

Y1 - 2009

N2 - The high vertical index contrast and the small thickness of InP-based membrane structures bonded with BCB on Silicon allow the realization of very small devices. Since photonic integrated circuits consist of both passive and active components, a successful active-passive integration with sub-micrometer active regions is an essential step. In this paper we will present our results on active-passive integration with sub-micrometer active areas. The interference of active and passive area shows a good quality in terms of morphology. Moreover we find that in the sub-micrometer size active area, the degradation of the material(InGaAsP QWs) due to clean room processing is limited.

AB - The high vertical index contrast and the small thickness of InP-based membrane structures bonded with BCB on Silicon allow the realization of very small devices. Since photonic integrated circuits consist of both passive and active components, a successful active-passive integration with sub-micrometer active regions is an essential step. In this paper we will present our results on active-passive integration with sub-micrometer active areas. The interference of active and passive area shows a good quality in terms of morphology. Moreover we find that in the sub-micrometer size active area, the degradation of the material(InGaAsP QWs) due to clean room processing is limited.

M3 - Conference contribution

SN - 978-90-5487-650-2

SP - 121

EP - 124

BT - Proceedings 14th Annual Symposium of the IEEE Photonics Benelux Chapter, 5-6 November 2009, Brussels, Belgium

A2 - Beri, St.

A2 - Tassin, Ph.

A2 - Craggs, G.

A2 - Leijtens, X.

A2 - Danckaert, J.

PB - Brussels University Press

CY - Brussels

ER -

Zhang R, Bordas F, Tol, van der JJGM, Thijs PJA, Ambrosius HPMM, Roelkens G et al. Sub-micrometer active-passive integration for InP-based membranes on silicon. In Beri S, Tassin P, Craggs G, Leijtens X, Danckaert J, editors, Proceedings 14th Annual Symposium of the IEEE Photonics Benelux Chapter, 5-6 November 2009, Brussels, Belgium. Brussels: Brussels University Press. 2009. p. 121-124

Sub-micrometer active-passive integration for InP-based membranes on silicon

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