Sub-micrometer active-passive integration for InP-based membranes on silicon

R. Zhang, F. Bordas, J.J.G.M. Tol, van der, P.J.A. Thijs, H.P.M.M. Ambrosius, G. Roelkens, M.A. Dündar, T. Vries, de, M.K. Smit

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Abstract

The high vertical index contrast and the small thickness of InP-based membrane structures bonded with BCB on Silicon allow the realization of very small devices. Since photonic integrated circuits consist of both passive and active components, a successful active-passive integration with sub-micrometer active regions is an essential step. In this paper we will present our results on active-passive integration with sub-micrometer active areas. The interference of active and passive area shows a good quality in terms of morphology. Moreover we find that in the sub-micrometer size active area, the degradation of the material(InGaAsP QWs) due to clean room processing is limited.
Original languageEnglish
Title of host publicationProceedings 14th Annual Symposium of the IEEE Photonics Benelux Chapter, 5-6 November 2009, Brussels, Belgium
EditorsSt. Beri, Ph. Tassin, G. Craggs, X. Leijtens, J. Danckaert
Place of PublicationBrussels
PublisherBrussels University Press
Pages121-124
ISBN (Print)978-90-5487-650-2
Publication statusPublished - 2009

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