The high vertical index contrast and the small thickness of InP-based membrane structures bonded with BCB on Silicon allow the realization of very small devices. Since photonic integrated circuits consist of both passive and active components, a successful active-passive integration with sub-micrometer active regions is an essential step. In this paper we will present our results on active-passive integration with sub-micrometer active areas. The interference of active and passive area shows a good quality in terms of morphology. Moreover we find that in the sub-micrometer size active area, the degradation of the material(InGaAsP QWs) due to clean room processing is limited.
|Title of host publication||Proceedings 14th Annual Symposium of the IEEE Photonics Benelux Chapter, 5-6 November 2009, Brussels, Belgium|
|Editors||St. Beri, Ph. Tassin, G. Craggs, X. Leijtens, J. Danckaert|
|Place of Publication||Brussels|
|Publisher||Brussels University Press|
|Publication status||Published - 2009|