Sub-10 nm pattern placement verification of quantum tomography freestanding gratings

First, a new method to detect drift induced electron beam placement errors is presented; by writing the grating in interlaced series the time between writing two neighbouring beams that define a slit (in a negative resist) is extended without extending the total exposure time, thus making drift more visible. Second, a new method to reduce charge built up in a 100 nm SiN membrane was experimentally proven to be successfull. These two methods made fabricating 1083 nm period freestanding gratings, with a slitwidth of 100 nm, and a slitwidth deviation of 6 nm possible.