TY - JOUR
T1 - Sub-10 nm pattern placement verification of quantum tomography freestanding gratings
AU - Eurlings, M.F.A.
AU - van Beek, J.T.M.
AU - Verheijen, M.J.
AU - Weterings, J.P.
AU - Beijerinck, H.C.W.
PY - 1998
Y1 - 1998
N2 - First, a new method to detect drift induced electron beam placement errors is presented; by writing the grating in interlaced series the time between writing two neighbouring beams that define a slit (in a negative resist) is extended without extending the total exposure time, thus making drift more visible. Second, a new method to reduce charge built up in a 100 nm SiN membrane was experimentally proven to be successfull. These two methods made fabricating 1083 nm period freestanding gratings, with a slitwidth of 100 nm, and a slitwidth deviation of 6 nm possible.
AB - First, a new method to detect drift induced electron beam placement errors is presented; by writing the grating in interlaced series the time between writing two neighbouring beams that define a slit (in a negative resist) is extended without extending the total exposure time, thus making drift more visible. Second, a new method to reduce charge built up in a 100 nm SiN membrane was experimentally proven to be successfull. These two methods made fabricating 1083 nm period freestanding gratings, with a slitwidth of 100 nm, and a slitwidth deviation of 6 nm possible.
U2 - 10.1016/S0167-9317(98)00050-1
DO - 10.1016/S0167-9317(98)00050-1
M3 - Article
VL - 41/42
SP - 219
EP - 222
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
ER -