Study of the reduced indium oxide (In2O3)/mc-silicon:hydrogen interface by means of factor analysis

J.M.M. Nijs, de; R.G.K.M. Aarts

doi:10.1002/sia.740170903

Study of the reduced indium oxide (In2O3)/mc-silicon:hydrogen interface by means of factor analysis

J.M.M. Nijs, de
, R.G.K.M. Aarts

Research output: Contribution to journal › Article › Academic › peer-review

13 Citations (Scopus)

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Abstract

The overgrowth of an In2O3 layer by a µc-Si:H layer, deposited by means of plasma-enhanced chemical vapour deposition, will inflict the reduction of the In2O3. AES is combination with Ar+ depth profiling is used for the study of the interfacial deterioration that takes place. The results of a factor analysis study after reduction of the In2O3 are presented.

Original language	English
Pages (from-to)	628-634
Journal	Surface and Interface Analysis
Volume	17
Issue number	9
DOIs	https://doi.org/10.1002/sia.740170903
Publication status	Published - 1991

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title = "Study of the reduced indium oxide (In2O3)/mc-silicon:hydrogen interface by means of factor analysis",

abstract = "The overgrowth of an In2O3 layer by a µc-Si:H layer, deposited by means of plasma-enhanced chemical vapour deposition, will inflict the reduction of the In2O3. AES is combination with Ar+ depth profiling is used for the study of the interfacial deterioration that takes place. The results of a factor analysis study after reduction of the In2O3 are presented.",

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AU - Nijs, de, J.M.M.

AU - Aarts, R.G.K.M.

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N2 - The overgrowth of an In2O3 layer by a µc-Si:H layer, deposited by means of plasma-enhanced chemical vapour deposition, will inflict the reduction of the In2O3. AES is combination with Ar+ depth profiling is used for the study of the interfacial deterioration that takes place. The results of a factor analysis study after reduction of the In2O3 are presented.

AB - The overgrowth of an In2O3 layer by a µc-Si:H layer, deposited by means of plasma-enhanced chemical vapour deposition, will inflict the reduction of the In2O3. AES is combination with Ar+ depth profiling is used for the study of the interfacial deterioration that takes place. The results of a factor analysis study after reduction of the In2O3 are presented.

U2 - 10.1002/sia.740170903

DO - 10.1002/sia.740170903

M3 - Article

SN - 0142-2421

VL - 17

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EP - 634

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

IS - 9

ER -

Study of the reduced indium oxide (In2O3)/mc-silicon:hydrogen interface by means of factor analysis

Abstract

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