Study of the carrier capture time: Relevance to laser performance

J.E.M. Haverkort, P.W.M. Blom, J.H. Wolter

Research output: Contribution to journalConference articlepeer-review

Abstract

We present an experimental and theoretical study of the carrier capture time into a semiconductor quantum well. We for the first time observe the predicted oscillations of the phonon emission induced capture time experimentally and found good agreement with theory. Calculations show that not only the LO-phonon emission induced capture time (ph-capture) oscillates as a function of well width, but also the carrier-carrier scattering induced capture time (c-c capture) oscillates by more than an order of magnitude as a function of the active layer design. Moreover, the calculated amount of excess carrier heating also oscillates as a function of quantum well thickness. Recently, it has been shown that the carrier capture time is directly related to the nonlinear gain in a quantum well laser. As a result, the nonlinear gain can be tailored by optimizing the capture efficiency using a proper design of the active layer in a quantum well laser.

Original languageEnglish
Pages (from-to)705-715
Number of pages11
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1985
DOIs
Publication statusPublished - 1 Jan 1993
EventPhysical Concepts and Materials for Novel Optoelectronic Device Applications II 1993 - Trieste, Italy
Duration: 23 May 199328 May 1993

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