TY - JOUR
T1 - Study of spatial distribution of SiH3 radicals in very high frequency plasma using cavity ringdown spectroscopy
AU - Nagai, Takehiko
AU - Smets, A.H.M.
AU - Kondo, M.
PY - 2006
Y1 - 2006
N2 - Time-resolved cavity ringdown (t-CRD) spectroscopy was applied to measure the SiH3 radical d. profile between the electrodes in a pulsed SiH4/H2 very high frequency (VHF) plasma under micro c-Si:H deposition conditions. On time scales smaller than .apprx.1 s, cavity loss reflects the light absorption by SiH3 radicals, whereas on time scales larger than .apprx.1 s, an addnl. cavity loss due to light scattering at Si clusters and dust particles, generated in the pulsed SiH4/H2 VHF plasma, is obsd. From the measurements of the spatial distribution of SiH3 radicals between electrodes, the incident SiH3 radical flux to the electrode surface is detd., which reveals a significant contribution of SiH3 radicals to micro c-Si:H thin film growth.
AB - Time-resolved cavity ringdown (t-CRD) spectroscopy was applied to measure the SiH3 radical d. profile between the electrodes in a pulsed SiH4/H2 very high frequency (VHF) plasma under micro c-Si:H deposition conditions. On time scales smaller than .apprx.1 s, cavity loss reflects the light absorption by SiH3 radicals, whereas on time scales larger than .apprx.1 s, an addnl. cavity loss due to light scattering at Si clusters and dust particles, generated in the pulsed SiH4/H2 VHF plasma, is obsd. From the measurements of the spatial distribution of SiH3 radicals between electrodes, the incident SiH3 radical flux to the electrode surface is detd., which reveals a significant contribution of SiH3 radicals to micro c-Si:H thin film growth.
U2 - 10.1143/JJAP.45.8095
DO - 10.1143/JJAP.45.8095
M3 - Article
SN - 0021-4922
VL - 45
SP - 8095
EP - 8098
JO - Japanese Journal of Applied Physics, Part 1 : Regular Papers and Short Notes & Review Papers
JF - Japanese Journal of Applied Physics, Part 1 : Regular Papers and Short Notes & Review Papers
IS - 10B
ER -