Time-resolved cavity ringdown (t-CRD) spectroscopy was applied to measure the SiH3 radical d. profile between the electrodes in a pulsed SiH4/H2 very high frequency (VHF) plasma under micro c-Si:H deposition conditions. On time scales smaller than .apprx.1 s, cavity loss reflects the light absorption by SiH3 radicals, whereas on time scales larger than .apprx.1 s, an addnl. cavity loss due to light scattering at Si clusters and dust particles, generated in the pulsed SiH4/H2 VHF plasma, is obsd. From the measurements of the spatial distribution of SiH3 radicals between electrodes, the incident SiH3 radical flux to the electrode surface is detd., which reveals a significant contribution of SiH3 radicals to micro c-Si:H thin film growth.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1 : Regular Papers and Short Notes & Review Papers|
|Publication status||Published - 2006|