Abstract
Electron Beam Lithography (EBL) metrology and least-square estimation of wafer-scale distortions is used to determine InP membrane deformation as a result of bonding to different substrate materials. First, the accuracy of EBL as a metrology tool for this particular application was assessed. Next, modelling of distortions was tested on unbonded InP wafers as a reference for extracting post-bonding distortions. Then we investigated the effect of substrate material choice on InP membrane deformation after bonding. We found residual expansion factors of 4.53±1, 312.4±1, and 317±1 ppm of the InP membrane bonded to InP, Si, and 3C-SiC carriers, respectively. For the SiO 2 carrier, the 3inch InP membrane split into smaller membranes to reduce the stress, highlighting the importance of substrate choice.
| Original language | English |
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| Title of host publication | 2023 24th European Microelectronics and Packaging Conference & Exhibition, EMPC 2023 |
| Publisher | Institute of Electrical and Electronics Engineers |
| Number of pages | 5 |
| ISBN (Electronic) | 978-0-9568086-9-1 |
| DOIs | |
| Publication status | Published - 9 Feb 2024 |
| Event | 24th European Microelectronics and Packaging Conference & Exhibition, EMPC 2023 - Cambridge, United Kingdom Duration: 11 Sept 2023 → 14 Sept 2023 |
Conference
| Conference | 24th European Microelectronics and Packaging Conference & Exhibition, EMPC 2023 |
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| Abbreviated title | EMPC 2023 |
| Country/Territory | United Kingdom |
| City | Cambridge |
| Period | 11/09/23 → 14/09/23 |
Funding
This research was performed in the NanoLab@TU/e cleanroom facility. This work was supported by the H2020 ICT TWILIGHT Project (contract No. 781471) under the Photonics PPP.
Keywords
- 3D integration
- Adhesive bonding
- heterogeneous integration
- metrology
- overlay lithography