Study of Spatial Distortion in InP Nanophotonic Membranes on Different Carrier Substrates

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

3 Citations (Scopus)
4 Downloads (Pure)

Abstract

Electron Beam Lithography (EBL) metrology and least-square estimation of wafer-scale distortions is used to determine InP membrane deformation as a result of bonding to different substrate materials. First, the accuracy of EBL as a metrology tool for this particular application was assessed. Next, modelling of distortions was tested on unbonded InP wafers as a reference for extracting post-bonding distortions. Then we investigated the effect of substrate material choice on InP membrane deformation after bonding. We found residual expansion factors of 4.53±1, 312.4±1, and 317±1 ppm of the InP membrane bonded to InP, Si, and 3C-SiC carriers, respectively. For the SiO 2 carrier, the 3inch InP membrane split into smaller membranes to reduce the stress, highlighting the importance of substrate choice.
Original languageEnglish
Title of host publication2023 24th European Microelectronics and Packaging Conference & Exhibition, EMPC 2023
PublisherInstitute of Electrical and Electronics Engineers
Number of pages5
ISBN (Electronic)978-0-9568086-9-1
DOIs
Publication statusPublished - 9 Feb 2024
Event24th European Microelectronics and Packaging Conference & Exhibition, EMPC 2023 - Cambridge, United Kingdom
Duration: 11 Sept 202314 Sept 2023

Conference

Conference24th European Microelectronics and Packaging Conference & Exhibition, EMPC 2023
Abbreviated titleEMPC 2023
Country/TerritoryUnited Kingdom
CityCambridge
Period11/09/2314/09/23

Keywords

  • 3D integration
  • Adhesive bonding
  • heterogeneous integration
  • metrology
  • overlay lithography

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