Study of molecular-beam epitaxy growth on patterned GaAs (311)A substrates with different mesa height

Q. Gong, R. Nötzel, H.-P. Schönherr, K. Ploog

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)

Abstract

We report on the evolution of the growth front during molecular-beam epitaxy on GaAs (3 1 1)A substrates stripe patterned along the [ ] direction as a function of the mesa height. During growth (1 0 0) and (2 1 1)A facets are formed and expand at the corners near the two opposite lying ( )A and (1 1 1)A mesa sidewalls, respectively. After covering the ( )A facet completely, the (1 0 0) facet shrinks away, leaving behind a convex surface profile. For shallow mesa height of several ten nanometers, the growth develops a fast-growing microscopic slope tilted several degrees to (3 1 1)A, which is identified as the basis for quantum wire formation.
Original languageEnglish
Pages (from-to)23-29
JournalJournal of Crystal Growth
Volume220
Issue number1-2
DOIs
Publication statusPublished - 2000

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