TY - JOUR
T1 - Study of molecular-beam epitaxy growth on patterned GaAs (311)A substrates with different mesa height
AU - Gong, Q.
AU - Nötzel, R.
AU - Schönherr, H.-P.
AU - Ploog, K.
PY - 2000
Y1 - 2000
N2 - We report on the evolution of the growth front during molecular-beam epitaxy on GaAs (3 1 1)A substrates stripe patterned along the [ ] direction as a function of the mesa height. During growth (1 0 0) and (2 1 1)A facets are formed and expand at the corners near the two opposite lying ( )A and (1 1 1)A mesa sidewalls, respectively. After covering the ( )A facet completely, the (1 0 0) facet shrinks away, leaving behind a convex surface profile. For shallow mesa height of several ten nanometers, the growth develops a fast-growing microscopic slope tilted several degrees to (3 1 1)A, which is identified as the basis for quantum wire formation.
AB - We report on the evolution of the growth front during molecular-beam epitaxy on GaAs (3 1 1)A substrates stripe patterned along the [ ] direction as a function of the mesa height. During growth (1 0 0) and (2 1 1)A facets are formed and expand at the corners near the two opposite lying ( )A and (1 1 1)A mesa sidewalls, respectively. After covering the ( )A facet completely, the (1 0 0) facet shrinks away, leaving behind a convex surface profile. For shallow mesa height of several ten nanometers, the growth develops a fast-growing microscopic slope tilted several degrees to (3 1 1)A, which is identified as the basis for quantum wire formation.
U2 - 10.1016/S0022-0248(00)00745-4
DO - 10.1016/S0022-0248(00)00745-4
M3 - Article
SN - 0022-0248
VL - 220
SP - 23
EP - 29
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-2
ER -