Nucleation and growth of CoSi2 films by thermal reaction of vapour deposited Co on (001) and (111) Si have been studied by transmission electron microscopy (TEM). On (001) Si, CoSi2 occurs in a number of orientations including the aligned (001) orientation. On (111) Si single crystalline layers are obtained, which are twin-oriented. In addition Si/CoSi2/Si structures have been formed by high-dose implantation of Co into (001) and (111) Si and subsequent annealing. In this way single crystalline ‘mesotaxial’ CoSi2 layers are obtained which are fully aligned with the Si-matrix. Epitaxial growth of CoSi2 on Si by conventional techniques (evaporation) and by high energy Co implantation is discussed.
|Title of host publication||Heterostructures on Silicon: One Step Further with Silicon|
|Editors||Y.I. Nissim, E. Rosencher|
|Number of pages||6|
|Publication status||Published - 1989|
|Name||NATO ASI Series, Series E: Applied Sciences|