Structural Study of CoSi2/Si (001) and (111)

C.W.T. Bulle-Lieuwma, A.H. Ommen, van, L.J. IJzendoorn, van

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review


    Nucleation and growth of CoSi2 films by thermal reaction of vapour deposited Co on (001) and (111) Si have been studied by transmission electron microscopy (TEM). On (001) Si, CoSi2 occurs in a number of orientations including the aligned (001) orientation. On (111) Si single crystalline layers are obtained, which are twin-oriented. In addition Si/CoSi2/Si structures have been formed by high-dose implantation of Co into (001) and (111) Si and subsequent annealing. In this way single crystalline ‘mesotaxial’ CoSi2 layers are obtained which are fully aligned with the Si-matrix. Epitaxial growth of CoSi2 on Si by conventional techniques (evaporation) and by high energy Co implantation is discussed.
    Original languageEnglish
    Title of host publicationHeterostructures on Silicon: One Step Further with Silicon
    EditorsY.I. Nissim, E. Rosencher
    Number of pages6
    ISBN (Electronic)978-94-009-0913-7
    ISBN (Print)978-94-010-6900-7
    Publication statusPublished - 1989

    Publication series

    NameNATO ASI Series, Series E: Applied Sciences
    ISSN (Print)0168-132X


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