Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates

S. Haffouz, A. Grzegorczyk, P.R. Hageman, P. Vennegues, E.W.J.M. Drift, van der, P.K. Larsen

Research output: Contribution to conferenceOtherAcademic

Original languageEnglish
Number of pages13
Publication statusPublished - 2002
Event11th International Conference on Metal-Organic Vapour Phase Epitaxy, June 1, 2002, Berlin, Germany - Berlin, Germany
Duration: 1 Jun 20021 Jun 2002

Conference

Conference11th International Conference on Metal-Organic Vapour Phase Epitaxy, June 1, 2002, Berlin, Germany
CountryGermany
CityBerlin
Period1/06/021/06/02

Cite this

Haffouz, S., Grzegorczyk, A., Hageman, P. R., Vennegues, P., Drift, van der, E. W. J. M., & Larsen, P. K. (2002). Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates. 11th International Conference on Metal-Organic Vapour Phase Epitaxy, June 1, 2002, Berlin, Germany, Berlin, Germany.