@inbook{77af103564714547bd091d4d5c8878d9,
title = "Structural properties of Bi containing InP films explored by cross-sectional scanning",
abstract = "The structural properties of highly mismatched III-V semiconductors with small amounts of Bi are still not well understood at the atomic level. In this chapter, the potential of cross-sectional scanning tunneling microscopy (X-STM) to address these questions is reviewed. Special attention is paid to the X-STM contrast of isovalent impurities in the III-V system, which is discussed on the basis of theoretical STM images of the (110) surface using density functional theory (DFT) calculations. By comparing high-resolution X-STM images with complementary DFT calculations, Bi atoms down to the third monolayer below the InP (110) surface are identified. With this information, the Short-range ordering of Bi is studied, which reveals a strong tendency toward Bi pairing and clustering. In addition, the occurrence of Bi surface segregation at the interfaces of an InP/InP1−xBix/InP quantum well with a Bi concentration of 2.4 % is discussed.",
author = "C.M. Krammel and P.M. Koenraad and M. Roy and P.A. Maksym and Shumin Wang",
year = "2019",
month = jan,
day = "1",
doi = "10.1007/978-981-13-8078-5_10",
language = "English",
isbn = "978-981-13-8077-8",
series = "Springer Series in Materials Science",
publisher = "Springer",
pages = "215--229",
editor = "S. Wang and P. Lu",
booktitle = "Springer Series in Materials Science",
address = "Germany",
}