Structural properties of Bi containing InP films explored by cross-sectional scanning

C.M. Krammel, P.M. Koenraad, M. Roy, P.A. Maksym, Shumin Wang

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The structural properties of highly mismatched III-V semiconductors with small amounts of Bi are still not well understood at the atomic level. In this chapter, the potential of cross-sectional scanning tunneling microscopy (X-STM) to address these questions is reviewed. Special attention is paid to the X-STM contrast of isovalent impurities in the III-V system, which is discussed on the basis of theoretical STM images of the (110) surface using density functional theory (DFT) calculations. By comparing high-resolution X-STM images with complementary DFT calculations, Bi atoms down to the third monolayer below the InP (110) surface are identified. With this information, the Short-range ordering of Bi is studied, which reveals a strong tendency toward Bi pairing and clustering. In addition, the occurrence of Bi surface segregation at the interfaces of an InP/InP1−xBix/InP quantum well with a Bi concentration of 2.4 % is discussed.

Original languageEnglish
Title of host publicationSpringer Series in Materials Science
EditorsS. Wang, P. Lu
Place of PublicationSingapore
Number of pages15
ISBN (Electronic)978-981-13-8078-5
ISBN (Print)978-981-13-8077-8
Publication statusPublished - 1 Jan 2019

Publication series

NameSpringer Series in Materials Science
ISSN (Print)0933-033X


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