Structural Investigations of GaAs/AIAs quantum wires and quantum dots

A.A. Darhuber, G. Bauer, P.D. Wang, Y.P. Song, C.M. Sotomayor Torres, M.C. Holland

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    We have investigated periodic arrays of dry etched 150 nm and 175 nm wide, (110) oriented GaAs/AlAs quantum wires and quantum dots by means of reciprocal-space mapping using triple-axis X-ray diffractometry. From the X-ray data the lateral periodicity of wires and dots, the etch depth and the angle of misorientation of the wires with respect to the (110) direction are extracted. The reciprocal-space maps reveal that, after the fabrication process the lattice constant along the growth direction increases slightly for the wires and even more so for the dots.
    Original languageEnglish
    Pages (from-to)A195-A199
    Number of pages5
    JournalJournal of Physics D: Applied Physics
    Issue numberA4
    Publication statusPublished - 1995


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