Structural characterization of self-assembled Ge-dots by x-ray diffraction and reflection

A.A. Darhuber, V. Holy, J. Stangl, G. Bauer, P. Schittenhelm, G. Abstreiter

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Abstract

    Self-organized Ge-dots on (OOI)-oriented Si-substrates have been studied using twodimensionally resolved high resolution x-ray diffraction and reflectivity. The degree of the vertical correlation of the dot positions ("stacking") has been derived as well as a lateral ordering of the dots in a (disordered) square array with main axes parallel to [100] and [010].
    Original languageEnglish
    Title of host publicationControl of semiconductor surfaces and interfaces : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.
    EditorsS.M. Prokes
    Place of PublicationWarrendale
    PublisherMaterials Research Society
    Pages199-204
    ISBN (Print)9781558993525
    DOIs
    Publication statusPublished - 1997

    Publication series

    NameMaterials Research Society symposium proceedings
    Volume448
    ISSN (Print)0272-9172

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