Structural characterization of reactive ion etched semiconductor nanostructures using x-ray reciprocal space mapping

G. Bauer, A.A. Darhuber, V. Holy

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Abstract

We have studied GaAs/AlAs periodic quantum dot arrays using high resolution x-ray diffraction (reciprocal space mapping) around the (004) and (113) reciprocal lattice points. From the distribution of the diffracted intensities we deduced the average strain status of the dots. From the numerical simulations it is evident that random elastic strain fields are present, which extend through almost the entire volume of the quantum dot. The simulations of the x-ray measurements revealed that the crystalline part of the dots is considerably smaller as scanning electron micrographs would indicate.
Original languageEnglish
Title of host publicationDiagnostic techniques for semiconductor materials processing : symposium, 2nd, Boston Mass., November 27-30, 1995
EditorsS.W. Pang, O.J. Glembocki
Place of PublicationPittsburgh
PublisherMaterials Research Society
Pages457-468
ISBN (Print)1-55899-309-6
DOIs
Publication statusPublished - 1996
Externally publishedYes

Publication series

NameMaterials Research Society symposium proceedings
Volume406
ISSN (Print)0272-9172

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