We have studied GaAs/AlAs periodic quantum dot arrays using high resolution x-ray diffraction (reciprocal space mapping) around the (004) and (113) reciprocal lattice points. From the distribution of the diffracted intensities we deduced the average strain status of the dots. From the numerical simulations it is evident that random elastic strain fields are present, which extend through almost the entire volume of the quantum dot. The simulations of the x-ray measurements revealed that the crystalline part of the dots is considerably smaller as scanning electron micrographs would indicate.
|Title of host publication||Diagnostic techniques for semiconductor materials processing : symposium, 2nd, Boston Mass., November 27-30, 1995|
|Editors||S.W. Pang, O.J. Glembocki|
|Place of Publication||Pittsburgh|
|Publisher||Materials Research Society|
|Publication status||Published - 1996|
|Name||Materials Research Society symposium proceedings |