Structural and optical properties of low-density and In-rich InAs/GaAs quantum dots

B. Alloing, C. Zinoni, L. Li, A. Fiore, G. Patriarche

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Self-assembled InAs/GaAs quantum dots were grown at very low InAs growth rate to form sparse and large quantum dots (QDs) emitting in the near IR (1300-1400 nm), for application as single-photon sources. The structural and optical properties of these QDs as a function of the growth rate were systematically studied. The QDs grown at the lowest rate (.apprx.10-3 ML/s) present a very low dot d. (.apprx.2 * 108 dots/cm2), high In content, and good size homogeneity. Photoluminescence and time-resolved photoluminescence measurements performed at different powers and temps. provide information on their luminescence efficiency, and on the recombination processes occurring in the low-d. QDs as compared to higher densities. [on SciFinder (R)]
Original languageEnglish
Article number024918
Pages (from-to)024918-1/7
JournalJournal of Applied Physics
Issue number2
Publication statusPublished - 2007


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