Structural and optical properties of columnar (In,Ga)As quantum dots on GaAs (100)

J. He; R. Nötzel; P. Offermans; P. M. Koenraad; Q. Gong; G. J. Hamhuis; T. J. Eijkemans; J. H. Wolter

doi:10.1109/SIM.2005.1511400

Structural and optical properties of columnar (In,Ga)As quantum dots on GaAs (100)

J. He, R. Nötzel, P. Offermans, P. M. Koenraad, Q. Gong, G. J. Hamhuis, T. J. Eijkemans, J. H. Wolter

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Control of the height of (In,Ga)As quantum dots (QDs) on GaAs (100) substrates is presented. Columnar (In,Ga)As QDs that are homogeneous both in composition and shape along the growth direction are created by molecular beam epitaxy. The columnar QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar QDs is controlled by varying the number of GaAs/InAs layers. With increased height the photoluminescence (PL) emission wavelength of the columnar QDs is red-shifted and the line width narrows. Uncapped columnar QDs (surface QDs) emit PL at a long peak wavelength of 1.45 μm at RT due to reduced compressive strain.

Original language	English
Title of host publication	2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	125-130
Number of pages	6
ISBN (Print)	078038668X, 9780780386686
DOIs	https://doi.org/10.1109/SIM.2005.1511400
Publication status	Published - 1 Dec 2005
Event	2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 - Beijing, China Duration: 20 Sept 2004 → 25 Sept 2004

Conference

Conference	2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004
Country/Territory	China
City	Beijing
Period	20/09/04 → 25/09/04

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10.1109/SIM.2005.1511400

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He, J., Nötzel, R., Offermans, P., Koenraad, P. M., Gong, Q., Hamhuis, G. J., Eijkemans, T. J., & Wolter, J. H. (2005). Structural and optical properties of columnar (In,Ga)As quantum dots on GaAs (100). In 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 (pp. 125-130). Article 1511400 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/SIM.2005.1511400

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title = "Structural and optical properties of columnar (In,Ga)As quantum dots on GaAs (100)",

abstract = "Control of the height of (In,Ga)As quantum dots (QDs) on GaAs (100) substrates is presented. Columnar (In,Ga)As QDs that are homogeneous both in composition and shape along the growth direction are created by molecular beam epitaxy. The columnar QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar QDs is controlled by varying the number of GaAs/InAs layers. With increased height the photoluminescence (PL) emission wavelength of the columnar QDs is red-shifted and the line width narrows. Uncapped columnar QDs (surface QDs) emit PL at a long peak wavelength of 1.45 μm at RT due to reduced compressive strain.",

author = "J. He and R. N{\"o}tzel and P. Offermans and Koenraad, {P. M.} and Q. Gong and Hamhuis, {G. J.} and Eijkemans, {T. J.} and Wolter, {J. H.}",

year = "2005",

month = dec,

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doi = "10.1109/SIM.2005.1511400",

language = "English",

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booktitle = "2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004 ; Conference date: 20-09-2004 Through 25-09-2004",

}

He, J, Nötzel, R, Offermans, P, Koenraad, PM, Gong, Q, Hamhuis, GJ, Eijkemans, TJ & Wolter, JH 2005, Structural and optical properties of columnar (In,Ga)As quantum dots on GaAs (100). in 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004., 1511400, Institute of Electrical and Electronics Engineers, Piscataway, pp. 125-130, 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004, Beijing, China, 20/09/04. https://doi.org/10.1109/SIM.2005.1511400

Structural and optical properties of columnar (In,Ga)As quantum dots on GaAs (100). / He, J.; Nötzel, R.; Offermans, P. et al.
2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004. Piscataway: Institute of Electrical and Electronics Engineers, 2005. p. 125-130 1511400.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Structural and optical properties of columnar (In,Ga)As quantum dots on GaAs (100)

AU - He, J.

AU - Nötzel, R.

AU - Offermans, P.

AU - Koenraad, P. M.

AU - Gong, Q.

AU - Hamhuis, G. J.

AU - Eijkemans, T. J.

AU - Wolter, J. H.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - Control of the height of (In,Ga)As quantum dots (QDs) on GaAs (100) substrates is presented. Columnar (In,Ga)As QDs that are homogeneous both in composition and shape along the growth direction are created by molecular beam epitaxy. The columnar QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar QDs is controlled by varying the number of GaAs/InAs layers. With increased height the photoluminescence (PL) emission wavelength of the columnar QDs is red-shifted and the line width narrows. Uncapped columnar QDs (surface QDs) emit PL at a long peak wavelength of 1.45 μm at RT due to reduced compressive strain.

AB - Control of the height of (In,Ga)As quantum dots (QDs) on GaAs (100) substrates is presented. Columnar (In,Ga)As QDs that are homogeneous both in composition and shape along the growth direction are created by molecular beam epitaxy. The columnar QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar QDs is controlled by varying the number of GaAs/InAs layers. With increased height the photoluminescence (PL) emission wavelength of the columnar QDs is red-shifted and the line width narrows. Uncapped columnar QDs (surface QDs) emit PL at a long peak wavelength of 1.45 μm at RT due to reduced compressive strain.

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U2 - 10.1109/SIM.2005.1511400

DO - 10.1109/SIM.2005.1511400

M3 - Conference contribution

AN - SCOPUS:33746646829

SN - 078038668X

SN - 9780780386686

SP - 125

EP - 130

BT - 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 2004 13th International Conference on Semiconducting and Insulating Materials, SIMC-XIII-2004

Y2 - 20 September 2004 through 25 September 2004

ER -

Structural and optical properties of columnar (In,Ga)As quantum dots on GaAs (100)

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