Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

A.G. Taboada, A.M. Sánchez, A.M. Beltrán, M. Bozkurt, D. Alonso-Álvarez, B. Alén, A. Rivera, J.M. Ripalda, J.M. Llorens, J. Martín-Sánchez, Y. González, J.M. Ulloa, J.M. García, S.I. Molina, P.M. Koenraad

Research output: Contribution to journalArticleAcademicpeer-review

15 Citations (Scopus)

Abstract

We present experimental evidence of Sb incorporation inside InAs/GaAs(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36μm accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity.

Original languageEnglish
Article number235316
Number of pages9
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume82
Issue number23
DOIs
Publication statusPublished - 14 Dec 2010

Fingerprint Dive into the research topics of 'Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots'. Together they form a unique fingerprint.

Cite this