Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

A.G. Taboada; A.M. Sánchez; A.M. Beltrán; M. Bozkurt; D. Alonso-Álvarez; B. Alén; A. Rivera; J.M. Ripalda; J.M. Llorens; J. Martín-Sánchez; Y. González; J.M. Ulloa; J.M. García; S.I. Molina; P.M. Koenraad

doi:10.1103/PhysRevB.82.235316

Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

A.G. Taboada, A.M. Sánchez, A.M. Beltrán, M. Bozkurt, D. Alonso-Álvarez, B. Alén, A. Rivera, J.M. Ripalda, J.M. Llorens, J. Martín-Sánchez, Y. González, J.M. Ulloa, J.M. García, S.I. Molina, P.M. Koenraad

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Abstract

We present experimental evidence of Sb incorporation inside InAs/GaAs(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36μm accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity.

Original language	English
Article number	235316
Number of pages	9
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	82
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.82.235316
Publication status	Published - 14 Dec 2010

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Taboada, A. G., Sánchez, A. M., Beltrán, A. M., Bozkurt, M., Alonso-Álvarez, D., Alén, B., Rivera, A., Ripalda, J. M., Llorens, J. M., Martín-Sánchez, J., González, Y., Ulloa, J. M., García, J. M., Molina, S. I., & Koenraad, P. M. (2010). Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots. Physical Review B - Condensed Matter and Materials Physics, 82(23), Article 235316. https://doi.org/10.1103/PhysRevB.82.235316

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title = "Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots",

abstract = "We present experimental evidence of Sb incorporation inside InAs/GaAs(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36μm accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity.",

author = "A.G. Taboada and A.M. S{\'a}nchez and A.M. Beltr{\'a}n and M. Bozkurt and D. Alonso-{\'A}lvarez and B. Al{\'e}n and A. Rivera and J.M. Ripalda and J.M. Llorens and J. Mart{\'i}n-S{\'a}nchez and Y. Gonz{\'a}lez and J.M. Ulloa and J.M. Garc{\'i}a and S.I. Molina and P.M. Koenraad",

year = "2010",

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doi = "10.1103/PhysRevB.82.235316",

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Taboada, AG, Sánchez, AM, Beltrán, AM, Bozkurt, M, Alonso-Álvarez, D, Alén, B, Rivera, A, Ripalda, JM, Llorens, JM, Martín-Sánchez, J, González, Y, Ulloa, JM, García, JM, Molina, SI & Koenraad, PM 2010, 'Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots', Physical Review B - Condensed Matter and Materials Physics, vol. 82, no. 23, 235316. https://doi.org/10.1103/PhysRevB.82.235316

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T1 - Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

AU - Taboada, A.G.

AU - Sánchez, A.M.

AU - Beltrán, A.M.

AU - Bozkurt, M.

AU - Alonso-Álvarez, D.

AU - Alén, B.

AU - Rivera, A.

AU - Ripalda, J.M.

AU - Llorens, J.M.

AU - Martín-Sánchez, J.

AU - González, Y.

AU - Ulloa, J.M.

AU - García, J.M.

AU - Molina, S.I.

AU - Koenraad, P.M.

PY - 2010/12/14

Y1 - 2010/12/14

N2 - We present experimental evidence of Sb incorporation inside InAs/GaAs(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36μm accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity.

AB - We present experimental evidence of Sb incorporation inside InAs/GaAs(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36μm accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity.

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

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M1 - 235316

ER -

Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

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