Strongly reduced gate lag in undoped AIGaN/GaN HEMTs on Sapphire

M.C.J.C.M. Krämer; B. Jacobs; J.J.M. Kwaspen; A.P. Hek, de; E.J. Geluk; F. Karouta

Strongly reduced gate lag in undoped AIGaN/GaN HEMTs on Sapphire

M.C.J.C.M. Krämer, B. Jacobs, J.J.M. Kwaspen, A.P. Hek, de, E.J. Geluk, F. Karouta

Photonic Integration

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	proc. Semiconductor Advances for Future Electronics (SAFE) 03
Place of Publication	Veldhoven, The Netherlands
Publisher	STW Technology Foundation
Pages	618-621
ISBN (Print)	90-73461-39-1
Publication status	Published - 2003
Event	Semiconductor Advances for Future Electronics (SAFE) 03 - Veldhoven, Netherlands Duration: 25 Nov 2003 → 26 Nov 2003

Conference

Conference	Semiconductor Advances for Future Electronics (SAFE) 03
Country/Territory	Netherlands
City	Veldhoven
Period	25/11/03 → 26/11/03

Cite this

@inproceedings{52f09b9b0ac5419688f1f4aab9e0712f,

title = "Strongly reduced gate lag in undoped AIGaN/GaN HEMTs on Sapphire",

author = "M.C.J.C.M. Kr{\"a}mer and B. Jacobs and J.J.M. Kwaspen and {Hek, de}, A.P. and E.J. Geluk and F. Karouta",

year = "2003",

language = "English",

isbn = "90-73461-39-1",

pages = "618--621",

booktitle = "proc. Semiconductor Advances for Future Electronics (SAFE) 03",

publisher = "STW Technology Foundation",

note = "Semiconductor Advances for Future Electronics (SAFE) 03 ; Conference date: 25-11-2003 Through 26-11-2003",

}

Krämer, MCJCM, Jacobs, B, Kwaspen, JJM, Hek, de, AP, Geluk, EJ & Karouta, F 2003, Strongly reduced gate lag in undoped AIGaN/GaN HEMTs on Sapphire. in proc. Semiconductor Advances for Future Electronics (SAFE) 03. STW Technology Foundation, Veldhoven, The Netherlands, pp. 618-621, Semiconductor Advances for Future Electronics (SAFE) 03, Veldhoven, Netherlands, 25/11/03.

Strongly reduced gate lag in undoped AIGaN/GaN HEMTs on Sapphire. / Krämer, M.C.J.C.M.; Jacobs, B.; Kwaspen, J.J.M. et al.
proc. Semiconductor Advances for Future Electronics (SAFE) 03. Veldhoven, The Netherlands: STW Technology Foundation, 2003. p. 618-621.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Strongly reduced gate lag in undoped AIGaN/GaN HEMTs on Sapphire

AU - Krämer, M.C.J.C.M.

AU - Jacobs, B.

AU - Kwaspen, J.J.M.

AU - Hek, de, A.P.

AU - Geluk, E.J.

AU - Karouta, F.

PY - 2003

Y1 - 2003

M3 - Conference contribution

SN - 90-73461-39-1

SP - 618

EP - 621

BT - proc. Semiconductor Advances for Future Electronics (SAFE) 03

PB - STW Technology Foundation

CY - Veldhoven, The Netherlands

T2 - Semiconductor Advances for Future Electronics (SAFE) 03

Y2 - 25 November 2003 through 26 November 2003

ER -