Strained-layer analysis with high-energy ion channeling

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Abstract

Channeling with high-energy He or H ions offers enhanced angular resolution since the characteristic angle for channeling decreases with increasing energy. In this study channeling experiments with high-energy He ions (4–15 MeV) have been performed with the Eindhoven AVF cyclotron, carefully controlling important parameters such as beam divergence and target alignment. We applied high-energy ion channeling using a three-axis goniometer with high angular accuracy for strain analysis in Si/Si1 - xGex/Si single-layer heterostructures with x = 0.175 and 0.05. The strain is derived from axial angular scans through the 110 and 111 directions in the {100} and {110} planes, respectively. The obtained scans are interpreted using the ion-trajectory simulation program LAROSE [J.H. Barrett, Phys. Rev. B 3 (1971) 1527]. The perpendicular lattice constant of the deformed Si1 - xGex layers was determined with an accuracy comparable to the accuracy reached with high resolution X-ray diffraction.
Original languageEnglish
Pages (from-to)97-102
Number of pages6
JournalNuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Volume118
Issue number1-4
DOIs
Publication statusPublished - 1996

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