Strained InGaAs/AlGaAs quantum well infrared detectors at 4.5 μm

A. Fiore; E. Rosencher; Ph. Bois; J. Nagle; N. Laurent

doi:10.1063/1.111135

Strained InGaAs/AlGaAs quantum well infrared detectors at 4.5 μm

A. Fiore, E. Rosencher, Ph. Bois, J. Nagle, N. Laurent

Photonics and Semiconductor Nanophysics

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Abstract

We demonstrate midinfrared photodetection at ¿=4.5 µm in a multi-quantum well detector using a strained InGaAs/AlGaAs alloy grown on a GaAs substrate. The detector shows very low dark current of a few pA, a peak unpolarized light responsivity R=12 mA/W for an external 45°angle of incidence, and a background-limited detectivity D*BL= 4×1010 cm Hz1/2/W at temperatures up to 95 K in the same conditions. This opens the way to high performance 3-5 and 8-12 µm GaAs-based multispectral detectors.

Original language	English
Pages (from-to)	478-480
Journal	Applied Physics Letters
Volume	64
Issue number	4
DOIs	https://doi.org/10.1063/1.111135
Publication status	Published - 1994

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title = "Strained InGaAs/AlGaAs quantum well infrared detectors at 4.5 μm",

abstract = "We demonstrate midinfrared photodetection at ¿=4.5 µm in a multi-quantum well detector using a strained InGaAs/AlGaAs alloy grown on a GaAs substrate. The detector shows very low dark current of a few pA, a peak unpolarized light responsivity R=12 mA/W for an external 45°angle of incidence, and a background-limited detectivity D*BL= 4×1010 cm Hz1/2/W at temperatures up to 95 K in the same conditions. This opens the way to high performance 3-5 and 8-12 µm GaAs-based multispectral detectors.",

author = "A. Fiore and E. Rosencher and Ph. Bois and J. Nagle and N. Laurent",

year = "1994",

doi = "10.1063/1.111135",

language = "English",

volume = "64",

pages = "478--480",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Strained InGaAs/AlGaAs quantum well infrared detectors at 4.5 μm

AU - Fiore, A.

AU - Rosencher, E.

AU - Bois, Ph.

AU - Nagle, J.

AU - Laurent, N.

PY - 1994

Y1 - 1994

N2 - We demonstrate midinfrared photodetection at ¿=4.5 µm in a multi-quantum well detector using a strained InGaAs/AlGaAs alloy grown on a GaAs substrate. The detector shows very low dark current of a few pA, a peak unpolarized light responsivity R=12 mA/W for an external 45°angle of incidence, and a background-limited detectivity D*BL= 4×1010 cm Hz1/2/W at temperatures up to 95 K in the same conditions. This opens the way to high performance 3-5 and 8-12 µm GaAs-based multispectral detectors.

AB - We demonstrate midinfrared photodetection at ¿=4.5 µm in a multi-quantum well detector using a strained InGaAs/AlGaAs alloy grown on a GaAs substrate. The detector shows very low dark current of a few pA, a peak unpolarized light responsivity R=12 mA/W for an external 45°angle of incidence, and a background-limited detectivity D*BL= 4×1010 cm Hz1/2/W at temperatures up to 95 K in the same conditions. This opens the way to high performance 3-5 and 8-12 µm GaAs-based multispectral detectors.

U2 - 10.1063/1.111135

DO - 10.1063/1.111135

M3 - Article

SN - 0003-6951

VL - 64

SP - 478

EP - 480

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Strained InGaAs/AlGaAs quantum well infrared detectors at 4.5 μm

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