Strained InGaAs/AlGaAs quantum well infrared detectors at 4.5 μm

A. Fiore, E. Rosencher, Ph. Bois, J. Nagle, N. Laurent

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Abstract

We demonstrate midinfrared photodetection at ¿=4.5 µm in a multi-quantum well detector using a strained InGaAs/AlGaAs alloy grown on a GaAs substrate. The detector shows very low dark current of a few pA, a peak unpolarized light responsivity R=12 mA/W for an external 45°angle of incidence, and a background-limited detectivity D*BL= 4×1010 cm Hz1/2/W at temperatures up to 95 K in the same conditions. This opens the way to high performance 3-5 and 8-12 µm GaAs-based multispectral detectors.
Original languageEnglish
Pages (from-to)478-480
JournalApplied Physics Letters
Volume64
Issue number4
DOIs
Publication statusPublished - 1994

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