Strain-induced g-factor tuning in single InGaAs/GaAs quantum dots

H.M.G.A. Tholen, J.S. Wildmann, A. Rastelli, R. Trotta, C.E. Pryor, E. Zallo, O.G. Schmidt, P.M. Koenraad, A. Yu Silov

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Abstract

The tunability of the exciton g factor in InGaAs quantum dots using compressive biaxial stress applied by piezoelectric actuators is investigated. We find a clear relation between the exciton g factor and the applied stress. A linear decrease of the g factor with compressive biaxial strain is observed consistently in all investigated dots. A connection is established between the response of the exciton g factor to the voltage applied to the piezoelectric actuator and the response of the quantum dot emission energy. We employ a numerical model based on eight-band k⋅p theory to calculate the exciton g factor of a typical dot as a function of strain and a good agreement with our experiments is found. Our calculations reveal that the change in exciton g factor is dominated by the contribution of the valence band and originates from increased heavy hole light hole splitting when applying external stress.
Original languageEnglish
Article number245301
Pages (from-to)1-6
JournalPhysical Review B
Volume94
Issue number24
DOIs
Publication statusPublished - 2 Dec 2016

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