Abstract
The tunability of the exciton g factor in InGaAs quantum dots using compressive biaxial stress applied by piezoelectric actuators is investigated. We find a clear relation between the exciton g factor and the applied stress. A linear decrease of the g factor with compressive biaxial strain is observed consistently in all investigated dots. A connection is established between the response of the exciton g factor to the voltage applied to the piezoelectric actuator and the response of the quantum dot emission energy. We employ a numerical model based on eight-band k⋅p theory to calculate the exciton g factor of a typical dot as a function of strain and a good agreement with our experiments is found. Our calculations reveal that the change in exciton g factor is dominated by the contribution of the valence band and originates from increased heavy hole light hole splitting when applying external stress.
Original language | English |
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Article number | 245301 |
Pages (from-to) | 1-6 |
Journal | Physical Review B |
Volume | 94 |
Issue number | 24 |
DOIs | |
Publication status | Published - 2 Dec 2016 |