Strain-driven (In,Ga)As growth instability on GaAs (311)A and (311)B : self-organization of template for InAs quantum dot nucleation control

Q. Gong, R. Nötzel, J.H. Wolter

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)

Abstract

We study the growth of (In,Ga)As on GaAs (311)A and (311)B substrates by molecular-beam epitaxy (MBE). Wire like structures and a matrix of closely packed cells develops, respectively, on (311)A and (311)B substrates, when the (In,Ga)As layer thickness exceeds a critical value for the onset of surface undulation due to the strain-driven growth instability. The established lateral strain distribution generates a unique template controlling nucleation and growth of (In,Ga)As quantum dots (QDs). On GaAs (311)B, the InAs QDs formed on the (In,Ga)As template exhibit pronounced improvement of the structural and optical properties
Original languageEnglish
Pages (from-to)150-154
JournalJournal of Crystal Growth
Volume251
Issue number1-4
DOIs
Publication statusPublished - 2003

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