TY - JOUR
T1 - Strain-driven (In,Ga)As growth instability on GaAs (311)A and (311)B : self-organization of template for InAs quantum dot nucleation control
AU - Gong, Q.
AU - Nötzel, R.
AU - Wolter, J.H.
PY - 2003
Y1 - 2003
N2 - We study the growth of (In,Ga)As on GaAs (311)A and (311)B substrates by molecular-beam epitaxy (MBE). Wire like structures and a matrix of closely packed cells develops, respectively, on (311)A and (311)B substrates, when the (In,Ga)As layer thickness exceeds a critical value for the onset of surface undulation due to the strain-driven growth instability. The established lateral strain distribution generates a unique template controlling nucleation and growth of (In,Ga)As quantum dots (QDs). On GaAs (311)B, the InAs QDs formed on the (In,Ga)As template exhibit pronounced improvement of the structural and optical properties
AB - We study the growth of (In,Ga)As on GaAs (311)A and (311)B substrates by molecular-beam epitaxy (MBE). Wire like structures and a matrix of closely packed cells develops, respectively, on (311)A and (311)B substrates, when the (In,Ga)As layer thickness exceeds a critical value for the onset of surface undulation due to the strain-driven growth instability. The established lateral strain distribution generates a unique template controlling nucleation and growth of (In,Ga)As quantum dots (QDs). On GaAs (311)B, the InAs QDs formed on the (In,Ga)As template exhibit pronounced improvement of the structural and optical properties
U2 - 10.1016/S0022-0248(02)02387-4
DO - 10.1016/S0022-0248(02)02387-4
M3 - Article
SN - 0022-0248
VL - 251
SP - 150
EP - 154
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -