The storing matter technique is applied in quadrupole type SIMS analyser. Its analytical chamber is additionally equipped with a specialmagnetically driven x, Θ, UHVmanipulator applied for transfer of the metal ring collector. The sample holder, horizontally positioned, carries the analysed sample as well as a watch like rotationmechanism carrying a continuously rotating collector of 1 inch diameter at a rate of 1 rev. per hour. The procedure includes cleaning of the collector with the ion beam, the collector reverse, sputter deposition of the analysed material from the sample onto the clean surface of the collector, reversal of the sample and analysis of the stored material. The whole procedure is performed in one analytical chamber, using a Physical Electronics 06-350E sputter ion gun and QMA-410 Balzers quadrupole mass analyser. The procedure is tested on pure chromium and is applied to an inconel alloy implanted with 120 keV Cr2+ and 145 keV Y2+. The SIMS results are obtained using 5 and 3 keV Ar+ ion beam at 45° incidence angle. As the collector, we use high purity titanium. The obtained depth profile analysis of the inconel alloy shows that the 'matrix effect' is largely reduced when compared with standard SIMS analysis. The storing matter procedure was performed with the use of oxygen flooding (during sputter deposition and during SIMS analysis). Results show significant improvement with respect to the use of this technique without oxygen flooding.
Bibliographical notePublisher Copyright:
Copyright © 2014 John Wiley & Sons, Ltd.
Copyright 2015 Elsevier B.V., All rights reserved.
- Depth profile analysis
- Quantitative analysis
- Secondary ion mass spectrometry (SIMS)
- Storing matter technique