STM imaging of Be delta doped layers in GaAs

P. M. Koenraad, M. B. Johnson, H. W.M. Salemink, J. H. Wolter

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

We have imaged Be delta-doped layers in GaAs with atomic resolution using cross-sectional scanning tunneling microscopy (STM). In the samples, grown at low temperature (480°C), we observe that the width of doping layers for concentrations up to 1.1013 cm-2 is smaller than 1 nm, while for higher doping concentrations we find that the doping layer thickness increases strongly with doping concentration. This broadening is symmetrical about the intended doping plane. We believe that this broadening of the doping layer at high doping concentrations is due to Coulombic repulsion between individual Be ions. The effect of Coulombic repulsion can also be observed in the spatial distribution of the dopant atoms in the plane of the doping layer.

Original languageEnglish
Title of host publicationProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
EditorsMike Melloch, Mark A. Reed
Place of PublicationPiscataway
PublisherInstitute of Electrical and Electronics Engineers
Pages245-248
Number of pages4
ISBN (Print)0780338839, 9780780338838
DOIs
Publication statusPublished - 1 Jan 1997
Event24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States
Duration: 8 Sep 199711 Sep 1997

Conference

Conference24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
Country/TerritoryUnited States
CitySan Diego
Period8/09/9711/09/97

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