Status and prospects for atomic layer Deposited metal oxide thin films in passivating contacts for c-Si photovoltaics

Bart Macco; Bas W.H. van de Loo; Jimmy Melskens; Sjoerd Smit; W.M.M. Kessels

doi:10.1109/PVSC.2017.8366571

Status and prospects for atomic layer Deposited metal oxide thin films in passivating contacts for c-Si photovoltaics

Bart Macco, Bas W.H. van de Loo, Jimmy Melskens, Sjoerd Smit, W.M.M. Kessels

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

In the field of photovoltaics, atomic layer deposition (ALD) is mostly known for its success in preparing Al₂O₃-based surface passivation layers for c-Si homojunction cells. In the last years, many novel types of c-Si heterojunctions have appeared, referred to as passivating contacts. In these concepts, metal oxide thin films are used for surface passivation, carrier selectivity and as transparent conductive oxide. This leads to the question whether the success of ALD for homojunctions can be translated into this new field as well. Therefore, this work provides an overview of these new concepts, and highlights both the current role and prospects of ALD in this field.

Original language	English
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Place of Publication	Piscataway
Publisher	Institute of Electrical and Electronics Engineers
Pages	1360-1365
Number of pages	6
ISBN (Electronic)	978-1-5090-5605-7
ISBN (Print)	978-1-5090-5606-4
DOIs	https://doi.org/10.1109/PVSC.2017.8366571
Publication status	Published - 25 May 2018
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: 25 Jun 2017 → 30 Jun 2017 Conference number: 44

Conference

Conference	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Abbreviated title	PVSC 2017
Country/Territory	United States
City	Washington
Period	25/06/17 → 30/06/17

Keywords

Atomic layer deposition
Carrier selectivity
Passivating contacts
Passivation
Silicon heterojunctions
Transparent conductive oxides

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/PVSC.2017.8366571

Cite this

Macco, B., van de Loo, B. W. H., Melskens, J., Smit, S., & Kessels, W. M. M. (2018). Status and prospects for atomic layer Deposited metal oxide thin films in passivating contacts for c-Si photovoltaics. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1360-1365). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PVSC.2017.8366571

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title = "Status and prospects for atomic layer Deposited metal oxide thin films in passivating contacts for c-Si photovoltaics",

abstract = "In the field of photovoltaics, atomic layer deposition (ALD) is mostly known for its success in preparing Al2O3-based surface passivation layers for c-Si homojunction cells. In the last years, many novel types of c-Si heterojunctions have appeared, referred to as passivating contacts. In these concepts, metal oxide thin films are used for surface passivation, carrier selectivity and as transparent conductive oxide. This leads to the question whether the success of ALD for homojunctions can be translated into this new field as well. Therefore, this work provides an overview of these new concepts, and highlights both the current role and prospects of ALD in this field.",

keywords = "Atomic layer deposition, Carrier selectivity, Passivating contacts, Passivation, Silicon heterojunctions, Transparent conductive oxides",

author = "Bart Macco and {van de Loo}, {Bas W.H.} and Jimmy Melskens and Sjoerd Smit and W.M.M. Kessels",

year = "2018",

month = may,

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doi = "10.1109/PVSC.2017.8366571",

language = "English",

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booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "44th IEEE Photovoltaic Specialist Conference, PVSC 2017, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

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Macco, B, van de Loo, BWH, Melskens, J, Smit, S & Kessels, WMM 2018, Status and prospects for atomic layer Deposited metal oxide thin films in passivating contacts for c-Si photovoltaics. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers, Piscataway, pp. 1360-1365, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, District of Columbia, United States, 25/06/17. https://doi.org/10.1109/PVSC.2017.8366571

Status and prospects for atomic layer Deposited metal oxide thin films in passivating contacts for c-Si photovoltaics. / Macco, Bart; van de Loo, Bas W.H.; Melskens, Jimmy et al.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Piscataway: Institute of Electrical and Electronics Engineers, 2018. p. 1360-1365.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Status and prospects for atomic layer Deposited metal oxide thin films in passivating contacts for c-Si photovoltaics

AU - Macco, Bart

AU - van de Loo, Bas W.H.

AU - Melskens, Jimmy

AU - Smit, Sjoerd

AU - Kessels, W.M.M.

N1 - Conference code: 44

PY - 2018/5/25

Y1 - 2018/5/25

N2 - In the field of photovoltaics, atomic layer deposition (ALD) is mostly known for its success in preparing Al2O3-based surface passivation layers for c-Si homojunction cells. In the last years, many novel types of c-Si heterojunctions have appeared, referred to as passivating contacts. In these concepts, metal oxide thin films are used for surface passivation, carrier selectivity and as transparent conductive oxide. This leads to the question whether the success of ALD for homojunctions can be translated into this new field as well. Therefore, this work provides an overview of these new concepts, and highlights both the current role and prospects of ALD in this field.

AB - In the field of photovoltaics, atomic layer deposition (ALD) is mostly known for its success in preparing Al2O3-based surface passivation layers for c-Si homojunction cells. In the last years, many novel types of c-Si heterojunctions have appeared, referred to as passivating contacts. In these concepts, metal oxide thin films are used for surface passivation, carrier selectivity and as transparent conductive oxide. This leads to the question whether the success of ALD for homojunctions can be translated into this new field as well. Therefore, this work provides an overview of these new concepts, and highlights both the current role and prospects of ALD in this field.

KW - Atomic layer deposition

KW - Carrier selectivity

KW - Passivating contacts

KW - Passivation

KW - Silicon heterojunctions

KW - Transparent conductive oxides

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DO - 10.1109/PVSC.2017.8366571

M3 - Conference contribution

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BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers

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Y2 - 25 June 2017 through 30 June 2017

ER -

Status and prospects for atomic layer Deposited metal oxide thin films in passivating contacts for c-Si photovoltaics

Abstract

Conference

Keywords

UN SDGs

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