Statistical energy study for 28nm FDSOI devices

Rida Kheirallah; Jean Marc Galliere; Aida Todri-Sanial; Nadine Azemard; Gilles Ducharme

doi:10.1109/EuroSimE.2015.7103149

Statistical energy study for 28nm FDSOI devices

Rida Kheirallah, Jean Marc Galliere, Aida Todri-Sanial, Nadine Azemard, Gilles Ducharme

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

Due to the effects of the Moore's law, the process variations in current technologies are increasing and have a major impact on power and performance which results in parametric yield loss. Due to this, process variability and the difficulty of modeling accurately transistor behavior impede the dimensions scaling benefits. The Fully Depleted Silicon-On-Insulator (FDSOI) technology is one of the main contenders for deep submicron devices as they can operate at low voltage with superior energy efficiency compared with bulk CMOS. In this paper, we study the static energy on 28nm FDSOI devices to implement sub-threshold circuits. Study of delay vs. static power trade-off reveals the FDSOI robustness with respect to process variations.

Original language	English
Title of host publication	2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015
Publisher	Institute of Electrical and Electronics Engineers
Number of pages	4
ISBN (Electronic)	9781479999507
DOIs	https://doi.org/10.1109/EuroSimE.2015.7103149
Publication status	Published - 6 May 2015
Externally published	Yes
Event	2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015 - Budapest, Hungary Duration: 19 Apr 2015 → 22 Apr 2015

Conference

Conference	2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015
Country/Territory	Hungary
City	Budapest
Period	19/04/15 → 22/04/15

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/EuroSimE.2015.7103149

Cite this

Kheirallah, R., Galliere, J. M., Todri-Sanial, A., Azemard, N., & Ducharme, G. (2015). Statistical energy study for 28nm FDSOI devices. In 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015 Article 7103149 Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/EuroSimE.2015.7103149

@inproceedings{a967abf4fe1e42419e63d3d8bdedfe60,

title = "Statistical energy study for 28nm FDSOI devices",

abstract = "Due to the effects of the Moore's law, the process variations in current technologies are increasing and have a major impact on power and performance which results in parametric yield loss. Due to this, process variability and the difficulty of modeling accurately transistor behavior impede the dimensions scaling benefits. The Fully Depleted Silicon-On-Insulator (FDSOI) technology is one of the main contenders for deep submicron devices as they can operate at low voltage with superior energy efficiency compared with bulk CMOS. In this paper, we study the static energy on 28nm FDSOI devices to implement sub-threshold circuits. Study of delay vs. static power trade-off reveals the FDSOI robustness with respect to process variations.",

author = "Rida Kheirallah and Galliere, {Jean Marc} and Aida Todri-Sanial and Nadine Azemard and Gilles Ducharme",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015 ; Conference date: 19-04-2015 Through 22-04-2015",

year = "2015",

month = may,

day = "6",

doi = "10.1109/EuroSimE.2015.7103149",

language = "English",

booktitle = "2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

}

Kheirallah, R, Galliere, JM, Todri-Sanial, A, Azemard, N & Ducharme, G 2015, Statistical energy study for 28nm FDSOI devices. in 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015., 7103149, Institute of Electrical and Electronics Engineers, 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015, Budapest, Hungary, 19/04/15. https://doi.org/10.1109/EuroSimE.2015.7103149

Statistical energy study for 28nm FDSOI devices. / Kheirallah, Rida; Galliere, Jean Marc; Todri-Sanial, Aida et al.
2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015. Institute of Electrical and Electronics Engineers, 2015. 7103149.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Statistical energy study for 28nm FDSOI devices

AU - Kheirallah, Rida

AU - Galliere, Jean Marc

AU - Todri-Sanial, Aida

AU - Azemard, Nadine

AU - Ducharme, Gilles

PY - 2015/5/6

Y1 - 2015/5/6

N2 - Due to the effects of the Moore's law, the process variations in current technologies are increasing and have a major impact on power and performance which results in parametric yield loss. Due to this, process variability and the difficulty of modeling accurately transistor behavior impede the dimensions scaling benefits. The Fully Depleted Silicon-On-Insulator (FDSOI) technology is one of the main contenders for deep submicron devices as they can operate at low voltage with superior energy efficiency compared with bulk CMOS. In this paper, we study the static energy on 28nm FDSOI devices to implement sub-threshold circuits. Study of delay vs. static power trade-off reveals the FDSOI robustness with respect to process variations.

AB - Due to the effects of the Moore's law, the process variations in current technologies are increasing and have a major impact on power and performance which results in parametric yield loss. Due to this, process variability and the difficulty of modeling accurately transistor behavior impede the dimensions scaling benefits. The Fully Depleted Silicon-On-Insulator (FDSOI) technology is one of the main contenders for deep submicron devices as they can operate at low voltage with superior energy efficiency compared with bulk CMOS. In this paper, we study the static energy on 28nm FDSOI devices to implement sub-threshold circuits. Study of delay vs. static power trade-off reveals the FDSOI robustness with respect to process variations.

UR - http://www.scopus.com/inward/record.url?scp=84944769215&partnerID=8YFLogxK

U2 - 10.1109/EuroSimE.2015.7103149

DO - 10.1109/EuroSimE.2015.7103149

M3 - Conference contribution

AN - SCOPUS:84944769215

BT - 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015

PB - Institute of Electrical and Electronics Engineers

T2 - 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015

Y2 - 19 April 2015 through 22 April 2015

ER -

Kheirallah R, Galliere JM, Todri-Sanial A, Azemard N, Ducharme G. Statistical energy study for 28nm FDSOI devices. In 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2015. Institute of Electrical and Electronics Engineers. 2015. 7103149 doi: 10.1109/EuroSimE.2015.7103149

Statistical energy study for 28nm FDSOI devices

Abstract

Conference

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this