Static memory devices

L. Elvira Villagra (Inventor), R.I.M.P. Meijer (Inventor), J. Pineda de Gyvez (Inventor)

Research output: PatentPatent publication

Abstract

A semiconductor memory device includes n-wells (22) and p-wells (24) used to make up a plurality of memory cell elements (40). The n-wells (22) and p-5 wells (24) can be back-biased to improve reading and writing performance. One of the n-wells and p-wells can be globally biased while the other one of the n-wells and p-wells can be biased by groups, such as blocks, rows or columns. Error reduction and/or correction can be performed by adjusting the well bias.
Original languageEnglish
Patent numberUS8107288 B2
Publication statusPublished - 31 Jan 2012

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