State-of-the-art graphene high-frequency electronics

Y. Wu, K.A. Jenkins, A. Valdes-Garcia, D.B. Farmer, Y. Zhu, A.A. Bol, C.D. Dimitrakopoulos, W. Zhu, F. Xia, Ph. Avouris, Y.M. Lin

Research output: Contribution to journalArticlepeer-review

320 Citations (Scopus)
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Abstract

High-performance graphene transistors for radio frequency applications have received much attention and significant progress has been achieved. However, devices based on large-area synthetic graphene, which have direct technological relevance, are still typically outperformed by those based on mechanically exfoliated graphene. Here, we report devices with intrinsic cutoff frequency above 300 GHz, based on both wafer-scale CVD grown graphene and epitaxial graphene on SiC, thus surpassing previous records on any graphene material. We also demonstrate devices with optimized architecture exhibiting voltage and power gains reaching 20 dB and a wafer-scale integrated graphene amplifier circuit with voltage amplification.
Original languageEnglish
Pages (from-to)3062-3067
Number of pages6
JournalNano Letters
Volume12
Issue number6
DOIs
Publication statusPublished - 2012
Externally publishedYes

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