Stacking, polarization control, and lasing of wavelength tunable (1.55 µm region) InAs/InGaAsP/InP (100) quantum dots

S. Anantathanasarn, R. Nötzel, P.J. Veldhoven, van, F.W.M. Otten, van, T.J. Eijkemans, Y. Barbarin, T. Vries, de, E. Smalbrugge, E.J. Geluk, E.A.J.M. Bente, Y.S. Oei, M.K. Smit, J.H. Wolter

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Abstract

We report the growth, device fabrication, and performance of stacked InAs/InGaAsP/InP (1 0 0) quantum dots (QDs) in telecom lasers. Wavelength tuning of the QDs grown by metalorg. vapor-phase epitaxy (MOVPE) over the 1.55-mm region at room temp. (RT) is achieved using ultrathin GaAs interlayers underneath the QDs, which suppress As/P exchange to reduce the QD height in a controlled way. Unpolarized photoluminescence from the cleaved side, important for realization of polarization-insensitive semiconductor optical amplifiers, is obtained for closely stacked QDs due to vertical electronic coupling. The wavelength shift due to group-V-atom intermixing in the QDs during growth at higher temps. of device structures is compensated by adjusting the GaAs interlayer thickness and V/III flow ratio during QD growth. Device quality of the QDs is highlighted by continuous-wave ground-state lasing at RT of narrow ridge-waveguide QD lasers. [on SciFinder (R)]
Original languageEnglish
Pages (from-to)553-557
Number of pages5
JournalJournal of Crystal Growth
Volume298
Issue number1
DOIs
Publication statusPublished - 2007

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