Stacked low-growth-rate InAs quantum dots studied at the atomic level by cross-sectional scanning tunneling microscopy

D.M. Bruls, P.M. Koenraad, H.W.M. Salemink, J.H. Wolter, M. Hopkinson, M.S. Skolnick

Research output: Contribution to journalArticleAcademicpeer-review

46 Citations (Scopus)
86 Downloads (Pure)

Abstract

Structures containing stacked self-assembled InAs quantum dots within a GaAs matrix are studied by cross-sectional scanning tunneling microscopy. The dots consist of an InGaAs alloy with an increasing indium concentration in the growth direction. From comparison of the lattice constant profiles of stacked and unstacked dots, it is evident that the strain in the GaAs matrix around the dots is strongly affected by the stacking process. The results show an increasing deformation of the dots in the stack and a reduced growth rate of the GaAs spacer layers, resulting in the formation of terraces on the growth surface on which new dots form. If the total structure, containing the dot layers and the spacer layers, exceeds 30 nm, the local GaAs growth rate remains constant from this point on. The InAs dot growth rate remains constant throughout the entire stack.
Original languageEnglish
Pages (from-to)3758-3760
JournalApplied Physics Letters
Volume82
Issue number21
DOIs
Publication statusPublished - 2003

Fingerprint Dive into the research topics of 'Stacked low-growth-rate InAs quantum dots studied at the atomic level by cross-sectional scanning tunneling microscopy'. Together they form a unique fingerprint.

  • Cite this