Stability of indium tin oxide/polymer interfaces

X. Crispin; A. Crispin; M.P. Jong, de; S. Marciniak; W. Osikowicz; S. Joensson; M. Fahlman; T. Kugler; L.J. IJzendoorn, van; M.J.A. Voigt, de; W.R. Salaneck

Stability of indium tin oxide/polymer interfaces

X. Crispin, A. Crispin, M.P. Jong, de, S. Marciniak, W. Osikowicz, S. Joensson, M. Fahlman, T. Kugler, L.J. IJzendoorn, van, M.J.A. Voigt, de, W.R. Salaneck

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

Interfacial chem. at In Sn oxide/polymer interfaces is of fundamental importance for the performance of polymer-based light emitting diodes. XPS and Rutherford backscattering spectrometry are used to study the stability of the interface formed between In Sn oxide and (i) the light emitting polymer poly(p-phenylenevinylene), and (ii) the hole injecting layer poly(3,4-ethylenedioxythiophene) polystyrenesulfonate. The formed interfaces are not stable and In-contg. species diffuse from the metal oxide surface into the polymer layers

Original language	English
Title of host publication	Crystalline oxide-silicon heterostructures and oxide optoelectronics : symposium held December 2 - 4, 2002, Boston, Massachusetts, U.S.A
Editors	D. Ginley
Place of Publication	Warrendale, Pa.
Publisher	Materials Research Society
Pages	315-326
ISBN (Print)	1-558-99684-2
Publication status	Published - 2003
Event	conference; Symposium T: Crystalline Oxides on Semiconductors ; (Boston, Mass.) : 2002.12.02-04; 2002-12-02; 2002-12-04 - Duration: 2 Dec 2002 → 4 Dec 2002

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	747
ISSN (Print)	0272-9172

Conference

Conference	conference; Symposium T: Crystalline Oxides on Semiconductors ; (Boston, Mass.) : 2002.12.02-04; 2002-12-02; 2002-12-04
Period	2/12/02 → 4/12/02
Other	Symposium T: Crystalline Oxides on Semiconductors ; (Boston, Mass.) : 2002.12.02-04

Cite this

Crispin, X., Crispin, A., Jong, de, M. P., Marciniak, S., Osikowicz, W., Joensson, S., Fahlman, M., Kugler, T., IJzendoorn, van, L. J., Voigt, de, M. J. A., & Salaneck, W. R. (2003). Stability of indium tin oxide/polymer interfaces. In D. Ginley (Ed.), Crystalline oxide-silicon heterostructures and oxide optoelectronics : symposium held December 2 - 4, 2002, Boston, Massachusetts, U.S.A (pp. 315-326). (Materials Research Society Symposium Proceedings; Vol. 747). Materials Research Society.

Crispin, X. ; Crispin, A. ; Jong, de, M.P. et al. / Stability of indium tin oxide/polymer interfaces. Crystalline oxide-silicon heterostructures and oxide optoelectronics : symposium held December 2 - 4, 2002, Boston, Massachusetts, U.S.A. editor / D. Ginley. Warrendale, Pa. : Materials Research Society, 2003. pp. 315-326 (Materials Research Society Symposium Proceedings).

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title = "Stability of indium tin oxide/polymer interfaces",

abstract = "Interfacial chem. at In Sn oxide/polymer interfaces is of fundamental importance for the performance of polymer-based light emitting diodes. XPS and Rutherford backscattering spectrometry are used to study the stability of the interface formed between In Sn oxide and (i) the light emitting polymer poly(p-phenylenevinylene), and (ii) the hole injecting layer poly(3,4-ethylenedioxythiophene) polystyrenesulfonate. The formed interfaces are not stable and In-contg. species diffuse from the metal oxide surface into the polymer layers",

author = "X. Crispin and A. Crispin and {Jong, de}, M.P. and S. Marciniak and W. Osikowicz and S. Joensson and M. Fahlman and T. Kugler and {IJzendoorn, van}, L.J. and {Voigt, de}, M.J.A. and W.R. Salaneck",

year = "2003",

language = "English",

isbn = "1-558-99684-2",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "315--326",

editor = "D. Ginley",

booktitle = "Crystalline oxide-silicon heterostructures and oxide optoelectronics : symposium held December 2 - 4, 2002, Boston, Massachusetts, U.S.A",

address = "United States",

note = "conference; Symposium T: Crystalline Oxides on Semiconductors ; (Boston, Mass.) : 2002.12.02-04; 2002-12-02; 2002-12-04 ; Conference date: 02-12-2002 Through 04-12-2002",

}

Crispin, X, Crispin, A, Jong, de, MP, Marciniak, S, Osikowicz, W, Joensson, S, Fahlman, M, Kugler, T, IJzendoorn, van, LJ, Voigt, de, MJA & Salaneck, WR 2003, Stability of indium tin oxide/polymer interfaces. in D Ginley (ed.), Crystalline oxide-silicon heterostructures and oxide optoelectronics : symposium held December 2 - 4, 2002, Boston, Massachusetts, U.S.A. Materials Research Society Symposium Proceedings, vol. 747, Materials Research Society, Warrendale, Pa., pp. 315-326, conference; Symposium T: Crystalline Oxides on Semiconductors ; (Boston, Mass.) : 2002.12.02-04; 2002-12-02; 2002-12-04, 2/12/02.

Stability of indium tin oxide/polymer interfaces. / Crispin, X.; Crispin, A.; Jong, de, M.P. et al.
Crystalline oxide-silicon heterostructures and oxide optoelectronics : symposium held December 2 - 4, 2002, Boston, Massachusetts, U.S.A. ed. / D. Ginley. Warrendale, Pa.: Materials Research Society, 2003. p. 315-326 (Materials Research Society Symposium Proceedings; Vol. 747).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Stability of indium tin oxide/polymer interfaces

AU - Crispin, X.

AU - Crispin, A.

AU - Jong, de, M.P.

AU - Marciniak, S.

AU - Osikowicz, W.

AU - Joensson, S.

AU - Fahlman, M.

AU - Kugler, T.

AU - IJzendoorn, van, L.J.

AU - Voigt, de, M.J.A.

AU - Salaneck, W.R.

PY - 2003

Y1 - 2003

N2 - Interfacial chem. at In Sn oxide/polymer interfaces is of fundamental importance for the performance of polymer-based light emitting diodes. XPS and Rutherford backscattering spectrometry are used to study the stability of the interface formed between In Sn oxide and (i) the light emitting polymer poly(p-phenylenevinylene), and (ii) the hole injecting layer poly(3,4-ethylenedioxythiophene) polystyrenesulfonate. The formed interfaces are not stable and In-contg. species diffuse from the metal oxide surface into the polymer layers

AB - Interfacial chem. at In Sn oxide/polymer interfaces is of fundamental importance for the performance of polymer-based light emitting diodes. XPS and Rutherford backscattering spectrometry are used to study the stability of the interface formed between In Sn oxide and (i) the light emitting polymer poly(p-phenylenevinylene), and (ii) the hole injecting layer poly(3,4-ethylenedioxythiophene) polystyrenesulfonate. The formed interfaces are not stable and In-contg. species diffuse from the metal oxide surface into the polymer layers

M3 - Conference contribution

SN - 1-558-99684-2

T3 - Materials Research Society Symposium Proceedings

SP - 315

EP - 326

BT - Crystalline oxide-silicon heterostructures and oxide optoelectronics : symposium held December 2 - 4, 2002, Boston, Massachusetts, U.S.A

A2 - Ginley, D.

PB - Materials Research Society

CY - Warrendale, Pa.

T2 - conference; Symposium T: Crystalline Oxides on Semiconductors ; (Boston, Mass.) : 2002.12.02-04; 2002-12-02; 2002-12-04

Y2 - 2 December 2002 through 4 December 2002

ER -

Crispin X, Crispin A, Jong, de MP, Marciniak S, Osikowicz W, Joensson S et al. Stability of indium tin oxide/polymer interfaces. In Ginley D, editor, Crystalline oxide-silicon heterostructures and oxide optoelectronics : symposium held December 2 - 4, 2002, Boston, Massachusetts, U.S.A. Warrendale, Pa.: Materials Research Society. 2003. p. 315-326. (Materials Research Society Symposium Proceedings).

Stability of indium tin oxide/polymer interfaces

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