Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

G. Dingemans; P. Engelhart; R. Seguin; F. Einsele; B. Hoex; M.C.M. Sanden, van de; W.M.M. Kessels

doi:10.1063/1.3264572

Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

G. Dingemans, P. Engelhart, R. Seguin, F. Einsele, B. Hoex, M.C.M. Sanden, van de, W.M.M. Kessels

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Abstract

The thermal and ultraviolet (UV) stability of crystalline silicon (c-Si) surface passivation provided by atomic layer deposited Al2O3 was compared with results for thermal SiO2. For Al2O3 and Al2O3/a-SiNx:H stacks on 2 O¿cm n-type c-Si, ultralow surface recombination velocities of Seff800¿°C) used for screen printed c-Si solar cells. Effusion measurements revealed the loss of hydrogen and oxygen during firing through the detection of H2 and H2O. Al2O3 also demonstrated UV stability with the surface passivation improving during UV irradiation.

Original language	English
Article number	114907
Pages (from-to)	114907-1/4
Number of pages	4
Journal	Journal of Applied Physics
Volume	106
Issue number	11
DOIs	https://doi.org/10.1063/1.3264572
Publication status	Published - 2009

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title = "Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon",

abstract = "The thermal and ultraviolet (UV) stability of crystalline silicon (c-Si) surface passivation provided by atomic layer deposited Al2O3 was compared with results for thermal SiO2. For Al2O3 and Al2O3/a-SiNx:H stacks on 2 O¿cm n-type c-Si, ultralow surface recombination velocities of Seff800¿°C) used for screen printed c-Si solar cells. Effusion measurements revealed the loss of hydrogen and oxygen during firing through the detection of H2 and H2O. Al2O3 also demonstrated UV stability with the surface passivation improving during UV irradiation.",

author = "G. Dingemans and P. Engelhart and R. Seguin and F. Einsele and B. Hoex and {Sanden, van de}, M.C.M. and W.M.M. Kessels",

year = "2009",

doi = "10.1063/1.3264572",

language = "English",

volume = "106",

pages = "114907--1/4",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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T1 - Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

AU - Dingemans, G.

AU - Engelhart, P.

AU - Seguin, R.

AU - Einsele, F.

AU - Hoex, B.

AU - Sanden, van de, M.C.M.

AU - Kessels, W.M.M.

PY - 2009

Y1 - 2009

N2 - The thermal and ultraviolet (UV) stability of crystalline silicon (c-Si) surface passivation provided by atomic layer deposited Al2O3 was compared with results for thermal SiO2. For Al2O3 and Al2O3/a-SiNx:H stacks on 2 O¿cm n-type c-Si, ultralow surface recombination velocities of Seff800¿°C) used for screen printed c-Si solar cells. Effusion measurements revealed the loss of hydrogen and oxygen during firing through the detection of H2 and H2O. Al2O3 also demonstrated UV stability with the surface passivation improving during UV irradiation.

AB - The thermal and ultraviolet (UV) stability of crystalline silicon (c-Si) surface passivation provided by atomic layer deposited Al2O3 was compared with results for thermal SiO2. For Al2O3 and Al2O3/a-SiNx:H stacks on 2 O¿cm n-type c-Si, ultralow surface recombination velocities of Seff800¿°C) used for screen printed c-Si solar cells. Effusion measurements revealed the loss of hydrogen and oxygen during firing through the detection of H2 and H2O. Al2O3 also demonstrated UV stability with the surface passivation improving during UV irradiation.

U2 - 10.1063/1.3264572

DO - 10.1063/1.3264572

M3 - Article

SN - 0021-8979

VL - 106

SP - 114907-1/4

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

M1 - 114907

ER -

Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

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