Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

G. Dingemans, P. Engelhart, R. Seguin, F. Einsele, B. Hoex, M.C.M. Sanden, van de, W.M.M. Kessels

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Abstract

The thermal and ultraviolet (UV) stability of crystalline silicon (c-Si) surface passivation provided by atomic layer deposited Al2O3 was compared with results for thermal SiO2. For Al2O3 and Al2O3/a-SiNx:H stacks on 2 O¿cm n-type c-Si, ultralow surface recombination velocities of Seff800¿°C) used for screen printed c-Si solar cells. Effusion measurements revealed the loss of hydrogen and oxygen during firing through the detection of H2 and H2O. Al2O3 also demonstrated UV stability with the surface passivation improving during UV irradiation.
Original languageEnglish
Article number114907
Pages (from-to)114907-1/4
Number of pages4
JournalJournal of Applied Physics
Volume106
Issue number11
DOIs
Publication statusPublished - 2009

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