Stability of a resonant tunneling diode

H.J.M.F. Noteborn; H.P. Joosten; D. Lenstra; K. Kaski

doi:10.1117/12.137631

Stability of a resonant tunneling diode

H.J.M.F. Noteborn
, H.P. Joosten
, D. Lenstra
, K. Kaski

Applied Physics and Science Education

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

141 Downloads (Pure)

Abstract

Space charge build-up in the well is shown to be the cause of the inductive effects in double-barrier diodes. A new impedance model for the diode is presented, built on a static model of coherent tunneling in a selfconsistent electron potential. The corresponding equivalent circuit is made up of two capacitances-related to the charge accumulations in the emitter and in the well-, and two conductances-one for each barrier. The numerical results of this circuit model are in qualitative agreement with experimental data. The success of the earlier quantum inductance model of Brown et is explained in terms of the presented model, without the need of introducing such a quantum inductance.

Original language	English
Title of host publication	Quantum Well and Superlattice Physics IV
Publisher	SPIE
Pages	57-66
Number of pages	10
DOIs	https://doi.org/10.1117/12.137631
Publication status	Published - 1 Jan 1992
Event	Semiconductors '92 - Somerset, United States Duration: 22 Mar 1992 → 22 Mar 1992

Publication series

Name	Proceedings of SPIE
Publisher	SPIE
Volume	1675
ISSN (Print)	0277-786X

Conference

Conference	Semiconductors '92
Country/Territory	United States
City	Somerset
Period	22/03/92 → 22/03/92

Funding

This work is part of the research programme of the Foundation for Fundamental Research on

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10.1117/12.137631

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title = "Stability of a resonant tunneling diode",

abstract = "Space charge build-up in the well is shown to be the cause of the inductive effects in double-barrier diodes. A new impedance model for the diode is presented, built on a static model of coherent tunneling in a selfconsistent electron potential. The corresponding equivalent circuit is made up of two capacitances-related to the charge accumulations in the emitter and in the well-, and two conductances-one for each barrier. The numerical results of this circuit model are in qualitative agreement with experimental data. The success of the earlier quantum inductance model of Brown et is explained in terms of the presented model, without the need of introducing such a quantum inductance.",

author = "H.J.M.F. Noteborn and H.P. Joosten and D. Lenstra and K. Kaski",

year = "1992",

month = jan,

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T1 - Stability of a resonant tunneling diode

AU - Noteborn, H.J.M.F.

AU - Joosten, H.P.

AU - Lenstra, D.

AU - Kaski, K.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - Space charge build-up in the well is shown to be the cause of the inductive effects in double-barrier diodes. A new impedance model for the diode is presented, built on a static model of coherent tunneling in a selfconsistent electron potential. The corresponding equivalent circuit is made up of two capacitances-related to the charge accumulations in the emitter and in the well-, and two conductances-one for each barrier. The numerical results of this circuit model are in qualitative agreement with experimental data. The success of the earlier quantum inductance model of Brown et is explained in terms of the presented model, without the need of introducing such a quantum inductance.

AB - Space charge build-up in the well is shown to be the cause of the inductive effects in double-barrier diodes. A new impedance model for the diode is presented, built on a static model of coherent tunneling in a selfconsistent electron potential. The corresponding equivalent circuit is made up of two capacitances-related to the charge accumulations in the emitter and in the well-, and two conductances-one for each barrier. The numerical results of this circuit model are in qualitative agreement with experimental data. The success of the earlier quantum inductance model of Brown et is explained in terms of the presented model, without the need of introducing such a quantum inductance.

UR - https://www.scopus.com/pages/publications/0346344894

U2 - 10.1117/12.137631

DO - 10.1117/12.137631

M3 - Conference contribution

AN - SCOPUS:0346344894

T3 - Proceedings of SPIE

SP - 57

EP - 66

BT - Quantum Well and Superlattice Physics IV

PB - SPIE

T2 - Semiconductors '92

Y2 - 22 March 1992 through 22 March 1992

ER -

Stability of a resonant tunneling diode

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