Stability of a resonant tunneling diode

H.J.M.F. Noteborn, H.P. Joosten, D. Lenstra, K. Kaski

Research output: Contribution to journalConference articleAcademicpeer-review

1 Citation (Scopus)
59 Downloads (Pure)


Space charge build-up in the well is shown to be the cause of the inductive effects in double-barrier diodes. A new impedance model for the diode is presented, built on a static model of coherent tunneling in a selfconsistent electron potential. The corresponding equivalent circuit is made up of two capacitances-related to the charge accumulations in the emitter and in the well-, and two conductances-one for each barrier. The numerical results of this circuit model are in qualitative agreement with experimental data. The success of the earlier quantum inductance model of Brown et is explained in terms of the presented model, without the need of introducing such a quantum inductance.

Original languageEnglish
Pages (from-to)57-66
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 1 Jan 1992
EventQuantum Well and Superlattice Physics IV 1992 - Somerset, United States
Duration: 22 Mar 1992 → …


Dive into the research topics of 'Stability of a resonant tunneling diode'. Together they form a unique fingerprint.

Cite this